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A Novel Integrated GSM Balun Design and Simulation

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Industrial IoT Technologies and Applications (Industrial IoT 2016)

Abstract

Base on the LTCC technology, the high integrated circuit, the excellent performance high frequency characteristic and good reliability can be achieved. This paper depicted theoretical analysis of Balun, and simulated a integrated and small Balun by using HFSS, its center frequency is 900 MHz, band width is 120 MHz, unbalance and balance impedance are 50 Ω, the degree of phase balance is 180 ± 6°. The real Balun is manufactured by using microwave ceramics material which its dielectric constant is 8 and loss tangent is 0.0005, By comparing the results of HFSS simulation analysis with the results of experiment, it shows clearly that experimental data is consistent with simulated data. It is discussed that some should be keep watch out in the experiment and simulation, and some technique is presented to control error between experimental data with simulated data.

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Acknowledgments

The authors would like to thank Guangdong Province Special Project of Industry-University-Institute Cooperation (No. 2014B090904080), 2013 Guangdong Province University High-level Personnel Project (Project Name: Energy-saving building intelligent management system key technologies research and development), Higher Vocational and Technical Education Research Association of Guangdong Province (No. GDGZ14Y033) and Guangdong Mechanical & Electrical College Natural Science Fund (No. YJL2014—042, No. YJKJ2015-2) for their support in this research.

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Correspondence to Jianqi Liu .

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© 2016 ICST Institute for Computer Sciences, Social Informatics and Telecommunications Engineering

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Luo, B., Liu, J., Zhang, Y., Zhang, Y., Zeng, B. (2016). A Novel Integrated GSM Balun Design and Simulation. In: Wan, J., Humar, I., Zhang, D. (eds) Industrial IoT Technologies and Applications. Industrial IoT 2016. Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering, vol 173. Springer, Cham. https://doi.org/10.1007/978-3-319-44350-8_12

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  • DOI: https://doi.org/10.1007/978-3-319-44350-8_12

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-44349-2

  • Online ISBN: 978-3-319-44350-8

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