Abstract
The third chapter explains the N-channel and the P-channel MOS transistors, their current-voltage characteristics and CMOS gates. It explains the proper circuit design techniques that lead to transistor sizing to meet design requirements prior to simulation. The estimation of rise and fall times, rise and fall delays are also given in this chapter as a function of load capacitance or gate fan-out.
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Bindal, A. (2017). MOS Transistors and CMOS Circuits. In: Electronics for Embedded Systems. Springer, Cham. https://doi.org/10.1007/978-3-319-39439-8_3
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DOI: https://doi.org/10.1007/978-3-319-39439-8_3
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Publisher Name: Springer, Cham
Print ISBN: 978-3-319-39437-4
Online ISBN: 978-3-319-39439-8
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