Abstract
The semiconductors like GaS, GaSe and InSe crystallize in lamellar structures with crystal lattice composed of B–A–A–B type packings bound by Van der Waals forces. Materials composed of Ga, In, Cd and Zn chalcogenide crystallites with sizes of 10–30 nm are obtained by heat treatment of GaS, GaSe, GaTe and InSe single crystalline plates in Zn and Cd vapor at temperatures from 653 to 853 K. Phase transformations of GaSe and GaTe compounds with formation of Ga 2 Se 3, CdGa 2 Se 4 and Ga 2 Te 3 compounds occur, as well as the formation of Ga-Cd and Cd-Te clusters on the surface, during the process of producing CdTe-GaTe and CdSe-GaSe nanocomposites.
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Evtodiev, I. et al. (2016). Crystalline Structure and Surface Morphology of AIIIBVI Type Lamellar Semiconductor Nanocomposites Obtained by Heat Treatment in Cd and Zn Vapor. In: Tiginyanu, I., Topala, P., Ursaki, V. (eds) Nanostructures and Thin Films for Multifunctional Applications. NanoScience and Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-30198-3_11
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