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TSV Processes

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Three-Dimensional Integration of Semiconductors

Abstract

Through-silicon via requires some unique process technologies. This chapter consists of four sub chapters. First sub chapter descibes deep silicon etching by “Bosch process.” The process adopts high aspect ratio and straight via. Some process paramaters are discussed.

Next sub chapter takes up steady-sate silicon etching process, also know as “non-Bosch process.” Physics and chemistry to realize fast and controlled deep silicon etching are discussed.

Third sub chapter deals with low temperature dielectric deposition. Unique liquid source chemical vapor deposition at low temperature and its properties are introduced.

Finally, electrodeposition of copper to fill high aspect ratio via is described. Electrochemical analysis, mathematical models of via filling, high-speed via filling and reduction of thermal expansion coefficient to avoid “copper pop-up” are discussed.

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Author information

Authors and Affiliations

  1. SPP Technologies Co., Ltd., 1–10, Fuso-cho, 660-0891, Amagasaki, Hyogo, Japan

    Masahiko Tanaka

  2. Graduate School of Engineering, Nagoya University, C3-1(631) Chikusa, 464-8603, Nagoya, Japan

    Dr. Makoto Sekine & Itsuko Sakai

  3. R&D Division, SAMCO Inc., 36 Waraya-cho, Takeda, Fushimi-ku, 612-8443, Kyoto, Japan

    Yutaka Kusuda, Tomoyuki Nonaka & Osamu Tsuji

  4. Osaka Prefecture University, Osaka, Japan

    Dr. Kazuo Kondo

Authors
  1. Masahiko Tanaka
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  2. Dr. Makoto Sekine
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  3. Itsuko Sakai
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  4. Yutaka Kusuda
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  5. Tomoyuki Nonaka
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  6. Osamu Tsuji
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  7. Dr. Kazuo Kondo
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Corresponding author

Correspondence to Masahiko Tanaka .

Editor information

Editors and Affiliations

  1. Department of Chemical Engineering, Osaka Prefecture University, Osaka, Japan

    Kazuo Kondo

  2. AIST , Tsukuba, Ibaraki, Japan

    Morihiro Kada

  3. Toshiba Corporation, Oita, Japan

    Kenji Takahashi

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Tanaka, M. et al. (2015). TSV Processes. In: Kondo, K., Kada, M., Takahashi, K. (eds) Three-Dimensional Integration of Semiconductors. Springer, Cham. https://doi.org/10.1007/978-3-319-18675-7_3

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