Abstract
In chap. 2 the performance of nMOS transistors at mm-wave frequencies was discussed. It became clear that only a very limited amount of gain is available at these frequencies. On top of that, a common source (CS) amplifier structure tends to show potentially unstable behavior. To avoid the problems regarding the stability of the device, techniques were adopted to minimize the internal feedback in a single device and accordingly, reduce the S12 of the device. The limited amount of gain of the nMOS transistors makes it necessary to adopt circuit design techniques in which gain maximization is one of the prior concerns. Of course, this will result in the degradation of other characteristics of the circuit in which the design techniques are applied.
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Deferm, N., Reynaert, P. (2015). Integrated Differential Amplifiers. In: CMOS Front Ends for Millimeter Wave Wireless Communication Systems. Analog Circuits and Signal Processing. Springer, Cham. https://doi.org/10.1007/978-3-319-13951-7_4
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DOI: https://doi.org/10.1007/978-3-319-13951-7_4
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