Abstract
In the past, mm-wave integrated circuits were always designed in high-performance RF technologies due to the limited performance of the standard CMOS transistors [Hun88]. However, the continuous scaling of the CMOS process toward gate lengths of several tens of nanometers has resulted in a considerable increase of the MOSFET performance at mm-wave frequencies. Despite this evolution of the devices, the performance of a single MOSFET is still limited, so advanced analog and RF design techniques are required. Low available gain of the nMOS is one of the most restrictive properties which has a severe impact on all other design parameters. Another big problem is the parasitic Miller capacitance in the MOSFET which results in potentially unstable behavior. These problems, together with the techniques to analyze them and design techniques to solve them, are discussed in this chapter.
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Deferm, N., Reynaert, P. (2015). CMOS at Millimeter Wave Frequencies. In: CMOS Front Ends for Millimeter Wave Wireless Communication Systems. Analog Circuits and Signal Processing. Springer, Cham. https://doi.org/10.1007/978-3-319-13951-7_2
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DOI: https://doi.org/10.1007/978-3-319-13951-7_2
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