Abstract
Cyberthreat security is a rapidly evolving landscape, where the diversity and number of attacks is constantly changing, requiring new approaches to defense. In the past, it was sufficient to predict likely attack methods and to monitor potential vulnerabilities, however, today the attacks are too varied and change too quickly for the traditional defenses to be effective. We need structures that are capable of identifying probable attacks and responding without human intervention. Due to the increasing rate of new attack methodologies, these structures need to be able to identify and respond to attacks that have never been seen before. That is, we need structures which are capable of learning.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
W.S. Mcculloch, W. Pitts, “A logical calculus of the ideas immanent in nervous activity,” Bulletin of Mathematical Biophysics, 5, 115-133 (1943).
R. Kozma, R.E. Pino, G.E. Pazienza, “Advances in Neuromorphic Memristor Science and Applications,” Springer (2012).
L.O. Chua, “Memristor – the missing circuit element,” IEEE Transactions on Circuit Theory, 18, 507-519 (1971).
L.O. Chua, S.M. Kang, “Memristive Devices and Systems,” Proceedings of the IEEE, 64, 209-223 (1976).
T. Prodromakis, C. Toumazou, L. Chua, “Two centuries of memristors,” Nature Materials, 11, 478-481 (2012).
D.B. Strukov, G.S. Snider, D.R. Stewart, R.S. Williams, “The missing memristor found,” Nature, 453, 80-83 (2008).
C. Cagli, D. Ielmini, F. Nardi, A.L. Lacaita, “Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction,” IEEE International Electron Devices Meeting, p 1-4 (2008).
S. Murali, J.S. Rajachidambaram, S.-Y. Han, C.-H. Chang, G.S. Herman, J.F. Conley Jr, “Resistive switching in zinc-tin-oxide,” Solid-State Electronics, 79, 248-252 (2013).
M.D. Pickett, D.B. Strukov, J.L. Borghetti, J.J. Yang, G.S. Snider, D.R. Stewart, R.S. Williams, “Switching dynamics in titanium dioxide memristive devices,” Journal of Applied Physics, 106, 074508 (2009).
B.J. Choi, J.J. Yang, M.-X. Zhang, K.J. Norris, D.A.A. Ohlberg, N.P. Kobayashi, G. Medeiros-Ribeiro, R.S. Williams, “Nitride memristors,” Applied Physics A, 109, 1-4 (2012).
M.J. Marinella, J.E. Stevens, E.M. Longoria, P.G. Kotula, “Resistive switching in aluminum nitride,” Device Research Conference, 89-90 (2012).
M. Mitkova, M.N. Kozicki, “Silver incorporation in Ge-Se glasses used in programmable metallization cell devices,” Journal of Non-Crystalline Solids, 299-302, 1023-1027 (2002).
M.N. Kozicki, M. Balakrishnan, C. Gopalan, C. Ratnakumar, M. Mitkova, “Programmable Metallization Cell Memory Based on Ag-Ge-S and Cu-Ge-S Solid Electrolytes,” Non-Volatile Memory Technology Symposium, 83-89 (2005).
R. Waser, M. Aono, “Nanoionics-based resistive switching memories,” Nature Materials, 6, 833-840 (2007).
L.O. Chua, “Resistance switching memories are memristors,” Applied Physics A, 102, 765-783 (2011).
J.J. Yang, D.B. Strukov, D.R. Stewart, “Memristive devices for computing,” Nature Nanotechnology, 8, 13-24 (2013).
H.S.P. Wong, H.-Y. Lee, S. Yu, Y.-S. Chen, Y. Wu, P.-S. Chen, B. Lee, F.T. Chen, M.-J. Tsai, “Metal-Oxide RRAM,” Proceedings of the IEEE, 100, 1951-1970 (2012).
J. Hutchby, M. Garner, “Assessment of the Potential & Maturity of Selected Emerging Research Memory Technologies Workshop & ERD/ERM Working Group Meeting,” (2010).
P.R. Mickel, A.J. Lohn, B.J. Choi, J.J. Yang, M.-X. Zhang, M.J. Marinella, C.D. James, R.S. Williams, “A physical model of switching dynamics in tantalum oxide memristive devices,” Applied Physics Letters, 102, 223502 (2013).
J.P. Strachan, A.C. Torrezan, F. Miao, M.D. Pickett, J.J. Yang, W. Yi, G. Medeiros-Ribeiro, R.S. Williams, “State Dynamics and Modeling of Tantalum Oxide Memristors,” IEEE Transactions on Electron Devices, 60, 2194-2202 (2013).
A.J. Lohn, P.R. Mickel, M.J. Marinella, “Dynamics of percolative breakdown mechanism in tantalum oxide resistive switching,” Applied Physics Letters, 103, 173503 (2013).
H.Y. Lee, Y.S. Chen, P.S. Chen, T.Y. Wu, F. Chen, C.C. Wang, P.J. Tzeng, M.-J. Tsai, C. Lien, “Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap, IEEE Electron Device Letters, 31, 44-46 (2010).
S. Lee, W.-G. Kim, S.-W. Rhee, K. Yong, “Resistance Switching Behaviors of Hafnium Oxide Films Grown by MOCVD for Nonvolatile Memory Applications,” Journal of the Electrochemical Society, 155, H92-H96 (2008).
D.O. Hebb, “The Organization of Behvior: A Neuropsychological Theory,” Wiley, (1949).
I.E. Ebong, P. Mazumder, “CMOS and Memristor-Based Neural Network Design for Position Detection,” Proceedings of the IEEE, 100, 2050-2060 (2012).
A. Thomas, “Memristor-based neural networks,” Journal of Physics D: Applied Physics, 46, 093001 (2013).
N. Brunel, V. Hakim, “Fast Global Oscillations in Networks of Integrate-and-Fire Neurons with low Firing Rates,” Neural Computation, 11, 1621-1671 (1999).
A.L. Hodgkin, A.F. Huxley, “A quantitative description of membrane current and its application to conduction and excitation in nerve,” The Journal of Physiology 117 (4) 500-544 (1952).
M.D. Pickett, G. Medeiros-Ribeiro, R.S. Williams, “A scalable neuristor built with Mott memristors,” Nature Materials, 12, 114-117 (2012).
C. Clopath, W. Gerstner, “Voltage and spike timing interact in STDP – a unified model,” Frontiers in Synaptic Neuroscience, 2, 1-11 (2010).
N. Caporale, Y. Dan, “Spike Timing-Dependent Plasticity: A Hebbian Learning Rule,” Annual Review of Neuroscience, 31, 25-46 (2008).
D.E. Feldman, “The Spike-Timing Dependence of Plasticity,” Neuron, 75, 556-571 (2012).
S. Ambrogio, S. Balatti, F. Nardi, S. Facchinetti, D. Ielmini, “Spike-timing dependent plasticity in a transistor-selected resistive switching memory,” Nanotechnology, 24, 384012 (2013).
F. Miao, J.P. Strachan, J.J. Yang, M.-X. Zhang, I. Goldfarb, A.C. Torrezan, P. Eschbach, R.D. Kelley, G. Medeiros-Ribeiro, R.S. Williams, “Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor,” Advanced Materials, 23, 5633-5640 (2011).
G.-S. Park, Y.B. Kim, S.Y. Park, X.S. Li, S. heo, M.-J. Lee, M. Chang, J.H. Kwon, M. Kim, U.-I. Chung, R. Dittmann, R. Waser, K. Kim, “In situ observation of filamentary conducting channels in an asymmetric Ta2O5-x/TaO2-x bilayer structure,” Nature Communications, 4, 1-9 (2013).
D.B. Strukov, F. Alibart, R.S. Williams, “Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal-oxide-metal memristors,” Applied Physics A, 107, 509-518 (2012).
F. Miao, W. Yi, I. Goldfarb, J.J. Yang, M.-X. Zhang, M.D. Pickett, J.P. Strachan, G. Medeiros-Ribeiro, R.S. Williams, “Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors,” ACS Nano, 6, 2312-2318 (2012).
P.R. Mickel, A.J. Lohn, M.J. Marinella, “Isothermal Switching and Detailed Filament Evolution in Memristive Systems,” Advanced Materials, 26, 4486-4490 (2014).
A.J. Lohn, P.R. Mickel, C.D. James, M.J. Marinella, “Degenerate Resistive Switching and Ultrahigh Density Storage in Resistive Memory,” Applied Physics Letters, 105, 103501 (2014).
P.R. Mickel, A.J. Lohn, M.J. Marinella, “Precise electrical control of nanoscale resistive filament geometry,” unpublished (2013).
D.F. Marrone, T.L. Petit, “The role of synaptic morphology in neural plasticity: structural interactions underlying synaptic power,” Brain Research Reviews, 38, 291-308 (2002).
R. Yuste, T. Bonhoeffer, “Morphological Changes in Dendritic Spines Associated with Long-Term Synaptic Plasticity,” Annual Reviews of Neuroscience, 24, 1071-1089 (2001).
R. Lamprecht, J. LeDoux, “Structural Plasticity and Memory,” Nature Reviews Neuroscience, 5, 45-54 (2004).
H. Kasai, M. Fukuda, S. Watanabe, A. Hayashi-Takagi, J. Noguchi, “Structural dynamics of dendritic spines in memory and cognition,” Trends in Neurosciences, 33, 121-129 (2010).
M. Matamales, “Neuronal activity-regulated gene transcription: how are distant synaptic signals conveyed to the nucleus?,” F1000Research, 1, 69 (2012).
S.N. Burke, C.A. Barnes, “Neural plasticity in the ageing brain,” Nature Reviews Neuroscience, 7, 30-40 (2006).
F.H. Gage, “Neurogenesis in the Adult Brain,” The Journal of Neuroscience, 22, 612-613 (2002).
J.B. Aimone, J. Wiles, F.H. Gage, “Potential role for adult neurogenesis in the encoding of time in new memories,” Nature Neuroscience, 9, 723-727 (2006).
I. Imayoshi, M. Sakamoto, T. Ohtsuka, K. Takao, T. Miyakawa, M. Yamaguchi, K. Mori, T. Ikeda, S. Itohara, R. Kageyama, “Roles of continuous neurogenesis in the structural and functional integrity of the adult forebrain,” Nature Neuroscience, 11, 1153-1161 (2008).
C.D. Clelland, M. Choi, C. Romberg, G.D. Clemenson Jr, A. Fragniere, P. Tyers, S. Jessberger, L.M. Saksida, R.A. Barker, F.H. Gage, T.J. Bussey, “A Functional Role for Adult Hippocampal Neurogenesis in Spatial Pattern Separation,” Science, 325, 210-213 (2009).
J.B. Aimone, J. Wiles, F.H. Gage, “Computational Influence of Adult Neurogenesis on Memory Encoding,” Neuron, 61, 187-202 (2009).
Y. Li, J.B. Aimone, X. Xu, E.M. Callaway, F.H. Gage, “Development of GABAergic inputs controls the contribution of maturing neurons to the adult hippocampal network,” Proceedings of the National Academy of Science, 109, 4290-4295 (2012).
R.A. Chambers, M.N. Potenza, R.E. Hoffman, W. Miranker, “Simulated Apoptosis/Neurogenesis Regulates Learning and Memory Capabilities of Adaptive Neural Networks,” Neuropsychopharmacology, 29, 747-758 (2004).
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2014 Springer International Publishing Switzerland
About this chapter
Cite this chapter
Lohn, A.J., Mickel, P.R., Aimone, J.B., Debenedictis, E.P., Marinella, M.J. (2014). Memristors as Synapses in Artificial Neural Networks: Biomimicry Beyond Weight Change. In: Pino, R., Kott, A., Shevenell, M. (eds) Cybersecurity Systems for Human Cognition Augmentation. Advances in Information Security, vol 61. Springer, Cham. https://doi.org/10.1007/978-3-319-10374-7_9
Download citation
DOI: https://doi.org/10.1007/978-3-319-10374-7_9
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-10373-0
Online ISBN: 978-3-319-10374-7
eBook Packages: Computer ScienceComputer Science (R0)