Abstract
Dry etching has been a key technology in the LSI manufacturing process, and the high integration of LSI would not have been realized without progress in this technology. However, because the process uses plasma, the devices are susceptible to various types of damages caused by high-energy and charged particles. A large amount of damage sometimes lowers the LSI yields and reliability.
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Nojiri, K. (2015). Dry Etching Damage. In: Dry Etching Technology for Semiconductors. Springer, Cham. https://doi.org/10.1007/978-3-319-10295-5_5
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DOI: https://doi.org/10.1007/978-3-319-10295-5_5
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