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Dry Etching Equipment

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Dry Etching Technology for Semiconductors

Abstract

This chapter first reviews the history of dry etching equipment. Then it provides detailed discussions of the basic mechanisms of plasma generation, plasma density, operating pressure conditions, and key characteristics of dry etching equipment used in LSI manufacturing today, including the barrel-type plasma etcher, capacitively coupled plasma (CCP) etcher, magnetron reactive-ion etching (RIE), electron-cyclotron resonance (ECR) plasma etcher, and inductively coupled plasma (ICP) etcher. Finally, the electrostatic chuck, which plays an important role in dry etching equipment, is discussed.

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References

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Authors and Affiliations

  1. Lam Research Co., Ltd., Tokyo, Japan

    Kazuo Nojiri

Authors
  1. Kazuo Nojiri
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© 2015 Springer International Publishing Switzerland

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Nojiri, K. (2015). Dry Etching Equipment. In: Dry Etching Technology for Semiconductors. Springer, Cham. https://doi.org/10.1007/978-3-319-10295-5_4

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  • DOI: https://doi.org/10.1007/978-3-319-10295-5_4

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-10294-8

  • Online ISBN: 978-3-319-10295-5

  • eBook Packages: EngineeringEngineering (R0)

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