Abstract
A guiding principle for designing a dry etching process has yet to be established. However, guidelines for designing a process may be obtained by examining the reaction processes. For that, one must first understand the mechanism of dry etching. This chapter starts with the basics of plasma and goes on to describe the dry etching reaction processes and the mechanism of anisotropic etching without relying on mathematical equations or difficult theories, in a way that is completely accessible to readers who have no background in dry etching.
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Nojiri, K. (2015). Mechanism of Dry Etching. In: Dry Etching Technology for Semiconductors. Springer, Cham. https://doi.org/10.1007/978-3-319-10295-5_2
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DOI: https://doi.org/10.1007/978-3-319-10295-5_2
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