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Conceptual Advances: Transport Properties

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Quantitative Recombination and Transport Properties in Silicon from Dynamic Luminescence

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Abstract

This chapter details the novel techniques and applications to resolve and quantify transport properties via modulated luminescence arising from this work. These involve a class of modulated photoluminescence techniques sensitive to net dopant concentration, which could be combined with four-point-probe measurements for studies of majority carrier mobility, and a transit time approach to accurately determine minority carrier mobility.

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Notes

  1. 1.

    The account given here is adapted from the corresponding original publications [1, 2].

  2. 2.

    Disregarding the injection dependence of the peak shift \(\tau _m\), which however does not affect the peak curvature sought here.

  3. 3.

    For the determination of \(\mathcal {R}_{\Phi }\), the effect of the injection dependence of the radiative recombination coefficient \(B\) on luminescence intensity \(\Phi (t)\) is to be taken into account.

  4. 4.

    The account given here is adapted from the corresponding original publication [43].

  5. 5.

    The modified Baek approach to surface recombination velocity, as used here, is detailed for silicon ingots in Sect. 8.4.2, and model curves \(R_B(S)|_{D_a}\) are shown in Fig. 8.19. Such curves can likewise be calculated for wafers on the basis of the steady-state solution of the continuity equation for wafers (rather than ingots) detailed in Sect. 3.2.2.

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  1. Fraunhofer Institut für Solare Energiesysteme ISE, Freiburg, Germany

    Johannes Giesecke

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Giesecke, J. (2014). Conceptual Advances: Transport Properties. In: Quantitative Recombination and Transport Properties in Silicon from Dynamic Luminescence. Springer Theses. Springer, Cham. https://doi.org/10.1007/978-3-319-06157-3_9

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