Abstract
This chapter discusses the very fundamental working principle of a solar cell. It is intended to briefly motivate the relevance of carrier recombination and carrier transport to solar cell operation without going into technological detail.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Notes
- 1.
The main lines of reasoning in this section draw on full derivations given in [1].
- 2.
This approximation is deemed accurate for \(|\varepsilon _F - \varepsilon _{C/V}|\gtrsim 3k_BT.\)
- 3.
Here, \(\Delta n_e = \Delta n_h = \Delta n\) is assumed.
- 4.
This derivation proceeds along the lines of a derivation given in [6].
- 5.
\(a_{e/h}\) enable a dimensionless logarithmic argument and incorporate a constant offset of \(\mu _{c,e/h}.\)
- 6.
Derivation proceeds along the lines of [6].
- 7.
Note that the maximum of the detailed balance limit (without concentration) as a function of band gap energy \(\varepsilon _G\) is shifted to \({\sim }1.3\,\mathrm{{eV}}\) as opposed to the maximum at \({\sim }1.1\,\mathrm{{eV}}\) encountered for the ultimate efficiency limit.
References
N.W. Ashcroft, D.N. Mermin, Solid State Physics (Saunders College, Philadelphia, 1976)
M.A. Green, Intrinsic concentration, effective densities of states, and effective mass in Silicon. J. Appl. Phys. 67, 2944–2954 (1990)
A.B. Sproul, M.A. Green, Improved Value for the Silicon intrinsic carrier concentration from 275 to 375 K. J. Appl. Phys. 70, 846–854 (1991)
A.B. Sproul, M.A. Green, Intrinsic carrier concentration and minority-carrier mobility of Silicon from 77 to 300 K. J. Appl. Phys. 73, 1214–1225 (1993)
P.P. Altermatt, A. Schenk, F. Geelhaar, G. Heiser, Reassessment of the intrinsic carrier density in Crystalline Silicon in view of band-gap narrowing. J. Appl. Phys. 93, 1598–1604 (2003)
P. Würfel, Physics of Solar Cells: From Basic Principles to Advanced Concepts (Wiley-VCH, Weinheim, 2009)
P.T. Landsberg, G. Tonge, Thermodynamic energy conversion efficiencies. J. Appl. Phys. 51, R1–R20 (1980)
P. Baruch, A. De Vos, P.T. Landsberg, J.E. Parrott, On some thermodynamic aspects of photovoltaic Solar Energy conversion. Solar Energy Mater. Solar Cells 36, 201–222 (1995)
D.R. Williams, Sun Fact Sheet, NASA (2012). http://nssdc.gsfc.nasa.gov/planetary/factsheet/sunfact.html
W. Shockley, H.J. Queisser, Detailed balance limit of efficiency of p-n junction solar cells. J. Appl. Phys. 32, 510–519 (1961)
R.N. Hall, Germanium rectifier characteristics. Phys. Rev. 83, 228 (1951)
W. Shockley, W.T. Read, Statistics of the recombinations of holes and electrons. Phys. Rev. 87, 835–842 (1952)
J. Zhao, A. Wang, M.A. Green, F. Ferrazza, 19.8 % efficient “Honeycomb” textured multicrystalline and 24.4 % monocrystalline silicon solar cells. Appl. Phys. Lett. 73, 1991–1993 (1998)
M.A. Green, The path to 25 % silicon solar sell efficiency: history of silicon cell evolution. Prog. Photovoltaics: Res. Appl. 17, 183–189 (2009)
M.A. Green, K. Emery, Y. Hishikawa, W. Warta, E.D. Dunlop, Solar cell efficiency tables (Version 41). Prog. Photovoltaics: Res. Appl. 21, 1–11 (2012)
J. Benick, B. Hoex, M.C.M. Van de Sanden, W.M.M. Kessels, O. Schultz, S.W. Glunz, High efficiency n-type Si solar cells on AlO-passivated Boron Emitters. Appl. Phys. Lett. 92, 253504 (2008)
P.J. Cousins, D.D. Smith, H.C. Luan, J. Manning, T.D. Dennis, A. Waldhauer, K.E. Wilson, G. Harley, W.P. Mulligan, Generation 3: improved performance at lower cost, in Proceedings of the 35th IEEE PVSC (Honolulu, 2010), pp. 275–278
B. Michl, M. Rüdiger, J.A. Giesecke, M. Hermle, W. Warta, M.C. Schubert, Efficiency limiting bulk recombination in multicrystalline silicon solar cells. Solar Energy Mater. Solar Cells 98, 441–447 (2012)
D. Macdonald, T. Roth, P.N.K. Deenapanray, K. Bothe, P. Pohl, J. Schmidt, Formation rates of Iron-Acceptor pairs in crystalline Silicon. J. Appl. Phys. 98, 083509 (2005)
K. Bothe, J. Schmidt, Electronically activated Boron-Oxygen-related recombination centers in crystalline Silicon. J. Appl. Phys. 99, 013701 (2006)
D.B.M. Klaassen, A unified mobility model for device simulation—I. Model equations and concentration dependence. Solid State Electron. 35, 953–959 (1992)
D.B.M. Klaassen, A unified mobility model for device simulation—II. Temperature dependence of carrier mobility and lifetime. Solid State Electron. 35, 961–967 (1992)
A.B. Sproul, M.A. Green, A.W. Stephens, Accurate determination of minority carrier- and lattice scattering-mobility in Silicon from photoconductance decay. J. Appl. Phys. 72, 4161–4171 (1992)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2014 Springer International Publishing Switzerland
About this chapter
Cite this chapter
Giesecke, J. (2014). Introduction to Solar Cell Operation. In: Quantitative Recombination and Transport Properties in Silicon from Dynamic Luminescence. Springer Theses. Springer, Cham. https://doi.org/10.1007/978-3-319-06157-3_2
Download citation
DOI: https://doi.org/10.1007/978-3-319-06157-3_2
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-06156-6
Online ISBN: 978-3-319-06157-3
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)