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Study on Temperature Dependence Scattering Mechanisms and Mobility Effects in GaN and GaAs HEMTs

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Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

Abstract

GaN and GaAs materials are the preferred materials of choice of worldwide researchers for High Electron Mobility Transistor (HEMT) due to suitable material properties. In this paper temperature dependence scattering effects are discussed. The degradation of mobility from different scattering mechanisms and its effect on drain current is also shown. The total mobility in bulk GaN and GaAs semiconductors are compared. The variations in electronic concentration with temperature are also presented in these types of HEMTs. The mobility degradation and its effect on drain current are also portrayed for AlGaAs/AlGaN HEMT’s.

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References

  1. Liu Bo et al, J. Semicond.34, 044006, (2012).

    Google Scholar 

  2. M. S. Shur, Plenum Publishing Corporation, New York (1987)

    Google Scholar 

  3. Jan Kuzmik and Alexandrox Georgakilas, IEEE Trans on Electron Devices, 58, 720, (2011).

    Google Scholar 

  4. Donald A Neamen, McGraw Hill, 4thEdn.,New York (2012)

    Google Scholar 

  5. Erhard Kohn and FaridMedjdoub, IEEE Explore, 978-1-4244-1728-5/07(2007).

    Google Scholar 

  6. Clemens Ostermaier et al, IEEE Electron Device Letters, 30, 1030 (2009)

    Google Scholar 

  7. F. F. Fang and W. E. Howard, Phys. Rev. Lett. 16, 797 (1966)

    Article  Google Scholar 

  8. Silvaco ATLAS User’s manual Volume 1and 2.

    Google Scholar 

  9. Guohao Yu, Yong Cai, Yue Wang, IEEE Electron Device Letters, 34, 6 (2013).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, 788010, Assam, India

    D. Pandey, A. Bhattacharjee & T. R. Lenka

Authors
  1. D. Pandey
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  2. A. Bhattacharjee
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  3. T. R. Lenka
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Corresponding author

Correspondence to T. R. Lenka .

Editor information

Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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© 2014 Springer International Publishing Switzerland

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Pandey, D., Bhattacharjee, A., Lenka, T.R. (2014). Study on Temperature Dependence Scattering Mechanisms and Mobility Effects in GaN and GaAs HEMTs. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_15

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