Abstract
The mechanical properties of materials are related to the fundamental bonding strengths of the constituent atoms in the solid and any bonding defects which might form. A molecular model is presented so that primary bond formation mechanisms (ionic, covalent, and metallic) can be better understood. How these bonds form and respond to mechanical stress/loading is very important for engineering applications. A discussion of elasticity, plasticity, and bond breakage is presented. The theoretical strengths of most molecular bonds in a crystal are seldom realized because of crystalline defects limiting the ultimate strength of the materials. Important crystalline defects such as vacancies, dislocations, and grain boundaries are discussed. These crystalline defects can play critically important roles as time-to-failure models are developed for: creep, fatigue, crack propagation, thermal expansion mismatch, corrosion and stress-corrosion cracking.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Notes
- 1.
Classical description is—two bodies cannot occupy the same space.
- 2.
In order that ionic contributions are comprehended from both near and far, the potential for anion-pair is often written as: φ(r) = −αe 2/r, where α is the Madelung constant. In cubic crystalline structures, α = 1 to 2.
- 3.
The classical oscillator will oscillate until all its energy is finally dissipated. The quantum oscillator, however, will dissipate its energy in quantum amounts (n + 1/2)ħω until it finally reaches its ground state. In the ground state, the quantum oscillator will still have zero-point energy oscillation: (1/2)ħω.
- 4.
The stress gradient is given by: \( \overrightarrow {\nabla } \sigma = \left[ {\hat{x}\frac{\partial }{\partial x} + \hat{y}\frac{\partial }{\partial y} + \hat{z}\frac{\partial }{\partial z}} \right]\sigma \left( {x,y,z} \right) \).
- 5.
Atom movement is opposite to vacancy movement. Atoms tend to move from relative compressive regions to relative tensile regions. Such atom movement tends to reduce both the relative compressive stress and the relative tensile stress. Atom (or vacancy) movement due to stress gradients is a stress-relief mechanism.
- 6.
Specific density represents the number of atoms per unit area.
- 7.
Other dislocation types can exist, such as screws dislocations (not discussed here). These can also be important in the mass-flow/creep process.
- 8.
The ramp-to-failure/rupture test is described in detail in Chap. 10.
- 9.
The usefulness of ramp-voltage-to-breakdown test for capacitor dielectrics is highlighted in Chap. 11.
- 10.
Recall from Chap. 8, one expects the relaxation-rate constant to be thermally activated: k = k0 exp [−Q/(KBT)].
- 11.
The load/force is constant. The average stress is only approximately constant during testing due to some expected cross-sectional area changes.
- 12.
Recall, from Chap. 11, that the stress-migration/creep bakes for aluminum were generally done at temperatures above 100 °C.
- 13.
Historically, these localized stresses at crack tips have been referred to as either stress raisers or stress risers. The terms will be used interchangeably.
- 14.
The elastic energy U elastic of the material reduces with crack propagation, thus we have defined ΔU released such that it is always positive, i.e., ΔUreleased = −ΔU elastic.
- 15.
Note that when the crack size a goes to zero, the apparent rupture stress goes to infinity. However, in these situations, where the right-hand side of the equation becomes extremely large, the rupture stress will be limited by the normal crack-free rupture mechanisms and σ rupture will assume the crack-free rupture strength.
- 16.
Recall that specific energy density is the energy per unit area.
- 17.
Historically, this has been referred to as Griffith’s equation which was developed for brittle materials. More recently, Irwin is usually credited for developing the failure in terms of a strain energy release rate G [(Eq. (56)], which incorporates both elastic and plastic deformations when new surfaces or interfaces are formed.
- 18.
Linear coefficients of thermal expansion are listed for several material types (in units of 10−6/°C): α polymers ≅ 50, α metals ≅ 10, α ceramics ≅ 2, α glass ≅ 0.5.
Bibliography
Materials Science
Ashby, M. and D. Jones: Engineering Materials, 2nd Edition, Butterworth/Heinemann Publishers, (1980).
Ashby, M. and D. Jones: Engineering Materials 1, Elsevier Publishing, (2005).
Askeland, D.: The Science and Engineering of Materials, 3rd Edition, PWS Publishing Company, (1994).
Barrett, C., W. Nix and A. Tetelman: The Principles of Engineering Materials, Prentice Hall, (1973).
Callister, W.: Materials Science and Engineering an Introduction, John Wiley and Sons, (2003).
Jastrzebski Z.: The Nature and Properties of Engineering Materials, 2nd Edition, John Wiley and Sons, (1976).
Keyser, C.: Materials Science in Engineering, 3rd Edition, Charles E. Merril Publishing, (1980).
Ralls, K., T. Courtney, and J. Wulff: Introduction to Materials Science and Engineering, John Wiley and Sons, (1976).
Ruoff, A.: Introduction to Materials Science, Prentice-Hall, (1972).
Tu, K., J. Mayer, and L. Feldman: Electronic Thin Film Science For Electrical Engineers and Materials Science, Macmillan Publishing Company, (1992).
Mechanics of Materials
Bedford, A. and K. Liechti: Mechanics of Materials, Prentice Hall, (2000).
Eisenberg, M.: Introduction to the Mechanics of Solids, Addison-Wesley Publishing, (1980).
Gere, J.: Mechanics of Materials, 5th Edition, Brooks/Cole Publishing, (2001).
Fracture Mechanics
Anderson, T.: Fracture Mechanics, 2nd Edition, CRC Press, (1995).
Dunn, C. and J. McPherson: Temperature Cycling Acceleration Factors for Aluminum Metallization Failure in VLSI Applications, IEEE International Reliability Physics Symposium, 252 (1990).
Griffith, A.: The Phenomena of Rupture and Flow in Solids, Philosophical Transactions, Series A, Vol. 221, pp. 163–198, (1920).
Hertzberg, R.: Fracture Mechanics and Engineering Materials, John Wiley and Sons, (1996).
Irwin, G.: Fracture Dynamics, Fracturing of Metals, American Society for Metals, Cleveland, pp. 147-166, (1948).
Stokes, R. and D. Evans: Fundamentals of Interfacial Engineering, Wiley-VCH, (1997).
Physical Chemistry
Atkins, P.: Physical Chemistry, 5th Edition, W.H Freeman and Company, New York, (1994).
Engel, T. and P. Reid: Physical Chemistry, Pearson & Benjamin Cummings, (2006).
McPherson, J.: Determination of the Nature of Molecular Bonding in Silica from Time-Dependent Dielectric Breakdown Data, J. Appl. Physics, 95, 8101 (2004).
Pauling, L.:The Nature of the Chemical Bond, 3rd Edition, Cornel University Press, (1960).
Silbey, R. and R. Alberty: Physical Chemistry, 3rd Edition, John Wiley and Sons (2001).
Solid State Physics
Ashcroft, N. and David Mermin: Solid State Physics, Harcourt Brace College Publishers, (1976).
Blakemore, J.: Solid State Physics, 2nd Edition, Cambridge University Press, (1985).
Kittel, C.: Introduction to Solid State Physics, 7th Edition, John Wiley and Sons, (1996).
McPherson, J.: Underlying Physics of the Thermochemical E-Model in Describing Low-Field Time-Dependent Dielectric Breakdown in SiO2 Thin Films, J. Appl. Physics, 84, 1513 (1998).
Turton, R.: The Physics of Solids, Oxford University Press, (2000).
Quantum Mechanics
Atkins, P. and R. Friedman: Molecular Quantum Mechanics, 3rd Edition, Oxford University Press, (1997).
Dirac, P.: The Principles of Quantum Mechanics, 4th Edition, Oxford Science Publications, (1958).
Griffiths, D.: Introduction to Quantum Mechanics, Prentice Hall, (1995).
Harrison, W.: Applied Quantum Mechanics, World Scientific Publishing, (2000).
McPherson, J.: Quantum Mechanical Treatment of Si-O Bond Breakage in Silica Under Time- Dependent Dielectric Breakdown, IEEE International Reliability Physics Symposium, 209 (2007).
Robinett, R.: Quantum Mechanics, 2nd Edition, Oxford University Press, (2006).
Shift, L.: Quantum Mechanics, McGraw-Hill Book Company, (1949).
Semiconductors and Dielectrics
Dumin, D.: Oxide Reliability, A Summary of Silicon Oxide Wearout, Breakdown, and Reliability, World Scientific, (2002).
Grove, A.: Physics and Technology of Semiconductor Devices, John Wiley and Sons, (1967).
Matare, H.: Defect Electronics in Semiconductors, Wiley-Interscience, (1971).
Streetman, B. and S. Banerjee: Solid State Electronic Devices, 5th Edition, Prentice Hall, (2000).
Sze, S.: Physics of Semiconductor Devices, 2nd Edition, John Wiley and Sons, (1981).
Sze, S.: Semiconductor Devices: Physics and Technology, 2nd Edition, John Wiley and Sons, (2002).
Thermodynamics and Statistical Mechanics
Desloge, E.: Statistical Physics, Holt, Riehart and Winston, (1966).
Haase, R.: Thermodynamics of Irreversible Processes, Dover Publications, (1969).
Kittel, C. and H. Kroemer: Thermal Physics, 2nd Edition, W.H. Freeman and Co., (1980).
Schrodinger, E.: Statistical Thermodynamics, Dover Publications, (1952).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2013 Springer International Publishing Switzerland
About this chapter
Cite this chapter
McPherson, J.W. (2013). Time-to-Failure Models for Selected Failure Mechanisms in Mechanical Engineering. In: Reliability Physics and Engineering. Springer, Heidelberg. https://doi.org/10.1007/978-3-319-00122-7_12
Download citation
DOI: https://doi.org/10.1007/978-3-319-00122-7_12
Published:
Publisher Name: Springer, Heidelberg
Print ISBN: 978-3-319-00121-0
Online ISBN: 978-3-319-00122-7
eBook Packages: EngineeringEngineering (R0)