Abstract
This chapter discusses the fabrication of high quality poly-Si films, by the industry standard technique of excimer laser crystallisation of a-Si:H precursor films. Alternative crystallisation procedures are also reviewed, including metal-induced solid phase crystallisation, as well as advanced procedures for achieving large grain and high mobility TFTs, using green solid-state lasers in addition to modified excimer laser techniques. The architecture of poly-Si TFTs is top-gated with a silicon dioxide gate dielectric, and issues with the implementation of self-aligned and non-self-aligned architectures are discussed, and illustrative processing schedules are listed. Finally, a simple qualitative cost model is presented, illustrating why the major commercial application of poly-Si TFTs is in the small-diagonal, portable display market.
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Brotherton, S.D. (2013). Poly-Si TFT Technology and Architecture. In: Introduction to Thin Film Transistors. Springer, Heidelberg. https://doi.org/10.1007/978-3-319-00002-2_7
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