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Theoretical Study of Quantum Well GaAsP(N)/GaP Structures for Solar Cells

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A Practical Guide for Advanced Methods in Solar Photovoltaic Systems

Part of the book series: Advanced Structured Materials ((STRUCTMAT,volume 128))

Abstract

In this theoretical study, we simulate a compressively strained GaAsxP1−x and tensile strain GaNyAsxP1−x−y quantum well active zones with the aim to be inserted in solar cells. We will compare the ternary GaAsP/GaP and quaternary GaNAsP/GaP quantum well structures (QWs) by modeling these two types of systems. We first studied the introduction effect of arsenic (As) into the host material GaP and the optoelectronic properties of the obtained ternary alloy GaAsP. Then, we study the additional effect of just a few percent of nitrogen (N) in this ternary alloy. Incorporate nitrogen into the GaAsP alloy has been shown to split the conduction band into two bands E+ and E− causing a reduction of the band gap energy. Addition of nitrogen to GaAsP induces a redshift in the emission wavelengths and increases the absorption coefficient.

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Authors and Affiliations

  1. Faculty of Technology, University Blida 1, Blida, Algeria

    L. Chenini & A. Aissat

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  1. L. Chenini
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  2. A. Aissat
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Correspondence to A. Aissat .

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Editors and Affiliations

  1. Renewable Energy Laboratory, University of Jijel, Jijel, Algeria

    Adel Mellit

  2. Faculty of Science, Physics Department, Islamic University, Madinah, Saudi Arabia

    Mohamed Benghanem

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Chenini, L., Aissat, A. (2020). Theoretical Study of Quantum Well GaAsP(N)/GaP Structures for Solar Cells. In: Mellit, A., Benghanem, M. (eds) A Practical Guide for Advanced Methods in Solar Photovoltaic Systems. Advanced Structured Materials, vol 128. Springer, Cham. https://doi.org/10.1007/978-3-030-43473-1_4

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