Abstract
Now that we have explored DML operation and efficiency in a conventional bulk CMOS, this chapter evaluates the DML technique in a relatively advanced 28 nm FD-SOI technology. Throughout, we provide fabricated ASIC measurements data to support the analysis and theoretical foundations presented in the previous chapters. In addition we show how DML logic can utilize the unique features of an ultra-thin body and box (UTBB) fully depleted silicon on insulator (FD-SOI) technology to achieve high-speed and energy-efficient designs for a wide range of supply voltage operations. This chapter starts with a brief comparison of DML and conventional static and dynamic CMOS logics for NAND–NOR chains in 28 nm FD-SOI. This basic analysis is followed by the construction of a real-life benchmark, a two-stage pipelined multiply-accumulate (MAC) circuit which was selected to assess the advantages of DML in terms of speed, energy, and area as compared to a conventional CMOS design. We show that the self-adjusted DML MAC achieves both a performance boost of up to 92% with 16% less energy consumption than the equivalent standard CMOS implementation. The energy saved can reach up to 35% when the low-power (fully static) mode is enabled. In addition, the DML MAC occupies 25% less area.
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Levi, I., Fish, A. (2021). Dual Mode Logic in FD-SOI Technology. In: Dual Mode Logic. Springer, Cham. https://doi.org/10.1007/978-3-030-40786-5_9
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DOI: https://doi.org/10.1007/978-3-030-40786-5_9
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