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Metalorganic Chemical Vapor Deposition 1

Homoepitaxial and Heteroepitaxial Growth of Ga2O3 and Related Alloys

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Gallium Oxide

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 293))

Abstract

This chapter is devoted to the growth of Ga2O3 and its alloys by metalorganic chemical vapor deposition (MOCVD ) or, equivalently, metalorganic vapor phase epitaxy (MOVPE). MOCVD is a standard epitaxial growth technique used for nitride, III–V, and oxide-based power devices as well as LEDs and laser diodes. It would, therefore, seem that MOCVD would be the most appropriate growth method to accelerate the development and commercialization of Ga2O3. However, molecular beam epitaxy (MBE) and halide vapor phase epitaxy (HVPE) were commonly used in the earlier growth studies of Ga2O3 epitaxial films. Fortunately, the broad range of knowledge available on the hardware and control systems of the MOCVD tool for the growth of device quality epitaxial films makes it easily adaptable to the growth of epitaxial Ga2O3. Device quality films grown at ~10 µm/h were demonstrated [1, 2], evidencing the ability of MOCVD to achieve the high throughput Ga2O3 epitaxial layer growth needed for high voltage power device and deep ultraviolet solar-blind photodetector commercial applications. This chapter discusses the following topics: the selection of suitable metalorganic precursors and oxygen sources used for the growth of Ga2O3 and (Al, Ga)2O3 alloys; the need for the careful design of the MOCVD reactors, homoepitaxial and heteroepitaxial growth on c-plane sapphire and native Ga2O3 substrates, donor and acceptor doping; and the origin and methods for mitigating or reducing unintentional impurities.

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Acknowledgements

This work was partially performed under the sponsorships AFOSR and ONR programs through grant numbers FA9550-17-P-0029 and N00014-16-P-2058, respectively. Collaborations and discussions with James S. Speck, Y. Zhang, A. Mauze, B. Hertog, P. Mukhopadhyay, W. V. Schoenfeld, T. Vogt, Adam T. Neal, and Shin Mou are acknowledged.

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    Fikadu Alema & Andrei Osinsky

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  1. Fikadu Alema
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  1. National Institute of Information and Communications Technology, Koganei, Tokyo, Japan

    Masataka Higashiwaki

  2. Graduate School of Engineering, Kyoto University, Katsura, Kyoto, Japan

    Shizuo Fujita

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Alema, F., Osinsky, A. (2020). Metalorganic Chemical Vapor Deposition 1. In: Higashiwaki, M., Fujita, S. (eds) Gallium Oxide. Springer Series in Materials Science, vol 293. Springer, Cham. https://doi.org/10.1007/978-3-030-37153-1_8

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