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Vertical Bridgman Growth Method

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Gallium Oxide

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 293))

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Abstract

The vertical Bridgman (VB) technique developed for β-Ga2O3 crystals will be introduced including specific details on the VB crucible material determined by the measurement of the melting temperature of β-Ga2O3 and the VB growth processes of β-Ga2O3 in ambient air. The characteristic features of the crystallinity and the tentative electric characteristics of β-Ga2O3 crystals grown by the VB technique will also be introduced.

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Authors and Affiliations

  1. Faculty of Engineering, Shinshu University, Nagano, 380-8553, Japan

    Keigo Hoshikawa

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  1. Keigo Hoshikawa
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Correspondence to Keigo Hoshikawa .

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Editors and Affiliations

  1. National Institute of Information and Communications Technology, Koganei, Tokyo, Japan

    Masataka Higashiwaki

  2. Graduate School of Engineering, Kyoto University, Katsura, Kyoto, Japan

    Shizuo Fujita

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Hoshikawa, K. (2020). Vertical Bridgman Growth Method. In: Higashiwaki, M., Fujita, S. (eds) Gallium Oxide. Springer Series in Materials Science, vol 293. Springer, Cham. https://doi.org/10.1007/978-3-030-37153-1_3

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