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Pulsed Laser Deposition 2

Heteroepitaxial Growth of Ga\(_2\)O\(_3\) and Related Alloys

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Gallium Oxide

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 293))

Abstract

We review heteroepitaxial growth of Ga\(_2\)O\(_3\) and related alloys by pulsed laser deposition (PLD). First, we briefly summarize the history of PLD and discuss its evolution and development since its breakthrough in the 1980s with the focus on combinatorial material synthesis. Then, the impact of strain on the lattice constant of rhombohedral, pseudomorphic (Al, Ga)\(_2\)O\(_3\) thin films is introduced and the determination of thin film composition from X-ray diffraction measurements is outlined. For monoclinic Ga\(_2\)O\(_3\) layers the influence of key growth parameters on growth rate and surface morphology is discussed. Electrical transport properties of monoclinic thin films doped by silicon or tin are presented and compared to that of homoepitaxial layers. For ternary thin films growth parameters strongly influence the chemical composition in addition to growth rate and morphology. High oxygen pressures and/or low growth temperatures are necessary for a stoichiometric transfer of the target composition to the epilayer which is explained by the desorption of gallium suboxides occurring otherwise. Further, we resume solubility limits and the dependence of structural, optical and vibrational properties on the alloy composition of monoclinic (In, Ga)\(_2\)O\(_3\) and (Al, Ga)\(_2\)O\(_3\) thin films.

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Acknowledgements

This work was financially supported by the European Social Fund within the Young Investigator Group “Oxide Heterostructures” (SAB 100310460) and partly by Deutsche Forschungsgemeinschaft in the Framework of Sonderforschungsbereich 762 “Functionality of Oxide Interfaces.”

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  1. Felix Bloch Institute for Solid State Physics, Linnéstrasse 5, 04103, Leipzig, Germany

    Holger von Wenckstern, Daniel Splith & Marius Grundmann

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  1. Holger von Wenckstern
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Correspondence to Holger von Wenckstern .

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Editors and Affiliations

  1. National Institute of Information and Communications Technology, Koganei, Tokyo, Japan

    Masataka Higashiwaki

  2. Graduate School of Engineering, Kyoto University, Katsura, Kyoto, Japan

    Shizuo Fujita

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von Wenckstern, H., Splith, D., Grundmann, M. (2020). Pulsed Laser Deposition 2. In: Higashiwaki, M., Fujita, S. (eds) Gallium Oxide. Springer Series in Materials Science, vol 293. Springer, Cham. https://doi.org/10.1007/978-3-030-37153-1_15

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