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Pulsed Laser Deposition 1

Homoepitaxial Growth of β-Ga2O3 on β-Ga2O3 Substrates

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Gallium Oxide

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 293))

Abstract

This chapter examines homoepitaxial β-Ga2O3 thin films fabricated by pulsed laser deposition. The recent availability of high-quality native substrates affords investigations using a wide range of growth conditions to achieve single crystalline films by pulsed laser deposition. Deposition parameter optimization and structural, electrical and chemical film characterization are presented for undoped and impurity-doped films. Films grown on commercially available (010) Fe compensation-doped substrates fabricated by the edge-defined film-fed growth technique and a developing Czochralski method are examined. Hall effect results from PLD Si-doped β-Ga2O3 films are compared with data produced from other vapor phase epitaxial growth techniques. The influence of substrate orientation on film properties is also studied with (010) and (001) crystals. Implementation of a PLD n+ regrowth layer in a transistor device is demonstrated to achieve low ohmic contact resistance. Results from β-(AlxGa1−x)2O3 film studies show the potential utility of heterostructures for field-effect transistor 2DEG formation.

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Authors and Affiliations

  1. Air Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright-Patterson Air Force Base, OH, 45433, USA

    Kevin D. Leedy

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  1. Kevin D. Leedy
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Correspondence to Kevin D. Leedy .

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Editors and Affiliations

  1. National Institute of Information and Communications Technology, Koganei, Tokyo, Japan

    Masataka Higashiwaki

  2. Graduate School of Engineering, Kyoto University, Katsura, Kyoto, Japan

    Shizuo Fujita

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Leedy, K.D. (2020). Pulsed Laser Deposition 1. In: Higashiwaki, M., Fujita, S. (eds) Gallium Oxide. Springer Series in Materials Science, vol 293. Springer, Cham. https://doi.org/10.1007/978-3-030-37153-1_14

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