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Mist Chemical Vapor Deposition 1

Heteroepitaxial Growth of α-Ga2O3 Thin Films on Sapphire Substrates

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Gallium Oxide

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 293))

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Abstract

This chapter summarizes fundamental issues of corundum-structured gallium oxide (α-Ga2O3) , which is obtained by heteroepitaxy on sapphire substrates and is featured by its large bandgap (~5.3 eV), bandgap engineering (3.7 to ~9 eV), and existing corundum-structured p-type oxide such as α-Ir2O3 , as well as low epitaxy cost on inexpensive sapphire substrates .

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Authors and Affiliations

  1. Kyoto University, Katsura, Nishikyo-Ku, Kyoto, 615-8520, Japan

    Shizuo Fujita

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  1. Shizuo Fujita
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Correspondence to Shizuo Fujita .

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Editors and Affiliations

  1. National Institute of Information and Communications Technology, Koganei, Tokyo, Japan

    Masataka Higashiwaki

  2. Graduate School of Engineering, Kyoto University, Katsura, Kyoto, Japan

    Shizuo Fujita

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Fujita, S. (2020). Mist Chemical Vapor Deposition 1. In: Higashiwaki, M., Fujita, S. (eds) Gallium Oxide. Springer Series in Materials Science, vol 293. Springer, Cham. https://doi.org/10.1007/978-3-030-37153-1_12

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