Abstract
We begin this chapter with a brief presentation of the theory of single electron tunneling (SET) through a potential barrier. The conditions necessary for the observation and registration of this effect include a low temperature of a few kelvins and a small-sized sample. Low temperature will reduce the thermal energy that could interfere with the tunneling process. A small size of the tunneling junction is necessary to ensure its low electric capacitance. Further in this chapter we describe the basic electronic systems using SET: the SETT transistor, the electron pump, and the turnstile device. We discuss the attempts to construct a direct-current standard with SET junctions and explain why the results are unsatisfactory. We also describe two SET systems of more practical importance: the electron-counting capacitance standard (ECCS) and the Coulomb blockade thermometer (CBT).
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References
M.H. Bae et al., Precision measurement of a potential-profile tunable single-electron pump. Metrologia 52, 19–200 (2015)
L. Esaki, New phenomenon in narrow germanium p-n junctions. Phys. Rev. 109, 603–604 (1958)
I. Giaever, Energy gap in superconductors measured by electron tunneling. Phys. Rev. Lett. 5, 147–150 (1960)
S.P. Giblin et al., Towards a quantum representation of the ampere using single electron pumps. Nat. Commun. 3, Article No 930 (2012)
H.D. Jensen, J.M. Martinis, Accuracy of the electron pump. Phys. Rev. B 46, 13407–13427 (1992)
J.P. Kauppinen et al., Coulomb blockade thermometer: tests and instrumentation. Rev. Sci. Instrum. 69, 4166–4175 (1998)
M.W. Keller et al., Accuracy of electron counting using a 7-junction electron pump. Appl. Phys. Lett. 69, 1804–1806 (1996)
Ch. Kittel, Introduction to Solid State Physics (Wiley, New York, 1996)
A.N. Korotkov, D.V. Averin, K.K. Likharev, S.A. Vasenko, Single-electron transistors as ultrasensitive electrometers. Springer Series in Electronics and Photonics, vol. 31 (Springer, New York, 1992), pp. 45–59
W. Nawrocki, Introduction to Quantum Metrology (in Polish) (Publishing House of Poznan University of Technology, Poznan, 2007)
J.P. Pekola, K.P. Hirvi, J.P. Kauppinen, M.A. Paalanen, Thermometry by arrays of tunnel junctions. Phys. Rev. Lett. 73, 2903–2906 (1994)
H. Scherer, H.W. Schumacher, Single-electron pumps and quantum current metrology in the revised SI. Annalen der Physik, Article No 18003781 (2019)
Y. Takahashi et al., Silicon single electron devices. Int. J. Electron. 86, 605–639 (1999)
C. Urbina, et al., Manipulating Electrons One by One, Single-Electronics—Recent Developments. Springer Series in Electronics and Photonics, vol. 31 (Springer, Berlin, 1992), pp. 23–44
G. Yamahata et al., High-accuracy current generation in the nanoampere regime from a silicon single-trap electron pump. Sci. Rep. 7, Article No. 45137 (2017)
N.M. Zimmerman, M.W. Keller, Electrical metrology with single electrons. Meas. Sci. Technol. 14, 1237–1242 (2003)
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Nawrocki, W. (2019). Single Electron Tunneling. In: Introduction to Quantum Metrology. Springer, Cham. https://doi.org/10.1007/978-3-030-19677-6_8
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DOI: https://doi.org/10.1007/978-3-030-19677-6_8
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