Abstract
In-situ ellipsometry, both single wavelength and spectroscopic, has been used to study the electron cyclotron resonance plasma oxidation of Si. Spectroscopic ellipsometry has been used to establish that the best fit optical model for the oxidation is a two layer model where the interface layer forms early and stabilizes and the outer layer is SiO2. The interface layer is modeled well as a mixture of a-Si and oxide. The kinetics of film growth were followed using single wavelength ellipsometry at a temperature insensitive wavelength, and the results were in agreement with the Cabrera-Mott theory.
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Joseph, J., Hu, Y.Z., Irene, E.A. (1993). Kinetics of Oxidation of Silicon by Electron Cyclotron Resonance Plasmas. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-1588-7_7
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DOI: https://doi.org/10.1007/978-1-4899-1588-7_7
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