Abstract
Recent works have noted that the structural relaxation of thermally grown SiO2 films and of pressure compacted silica glass both consist of an initial rapid change to a level which depends on temperature followed by a slow approach to equilibrium. In this work we discuss structural changes of thermally grown SiO2 using concepts and models previously developed for quenched glasses. These naturally exhibit the observed features when applied to thermal oxides. They are based on a time-dependent rate coefficient which leads to a Kohlrausch stretched exponential form expEquationSource% MathType!MTEF!2!1!+- % feaagCart1ev2aqatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn % hiov2DGi1BTfMBaeXatLxBI9gBaerbd9wDYLwzYbItLDharqqtubsr % 4rNCHbGeaGqiVu0Je9sqqrpepC0xbbL8F4rqqrFfpeea0xe9Lq-Jc9 % vqaqpepm0xbba9pwe9Q8fs0-yqaqpepae9pg0FirpepeKkFr0xfr-x % fr-xb9adbaqaaeGaciGaaiaabeqaamaabaabaaGcbaWaamWaaeaacq % GHsislcaGGOaGaamiDaiaac+cacqaHepaDcaGGQaGaaiykamaaCaaa % leqabaGaaGymaiabgkHiTiaad6gaaaaakiaawUfacaGLDbaaaaa!411E!]]</EquationSource><EquationSource Format="TEX"><![CDATA[$$\left[ { - {{(t/\tau *)}^{1 - n}}} \right]$$. This is generalized to include a dependence on thermal and annealing history through structural variations of n and τ*. The physical interpretation of these models is described, numerical simulations of relaxation of a thermally grown oxide are presented, and the relations between different relaxation times and activation energies are discussed.
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Rendell, R.W., Ngai, K.L. (1988). Structural Relaxation and Growth of SiO2 Films on Si. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_16
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DOI: https://doi.org/10.1007/978-1-4899-0774-5_16
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