Abstract
Oxidation kinetics of p-type (100) silicon in 1 atm dry carbon dioxide-carbon monoxide-argon gas mixture were examined using thermogravimetry. The kinetics follow the parallel diffusion model originally proposed by Han et al. for oxidation in dry oxygen. The oxidation rates are governed by only the partial pressure of carbon dioxide, and they are independent of the partial pressures of carbon monoxide and oxygen. The possible reaction mechanism is proposed, where the dominant diffusion species and less dominant species are the interstitial oxygen molecule and oxygen vacancy.
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Sakon, T., Wagner, J.B. (1988). Oxidation Kinetics of Si in Dry CO2 . In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_10
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DOI: https://doi.org/10.1007/978-1-4899-0774-5_10
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