Abstract
Gas Source MBE including Chemical Beam Epitaxy is shown to be a promising technique for the growth of heterostructures involving the incorporation of both arsenic and phosphorus species.
Planar quantum confined Stark effect modulators/detectors have been fabricated from InP/InGaAs multi-quantum well stacks containing 200 wells. The layer sequences have been analysed by both optical and double crystal X-ray techniques. The modulator structures have shown excellent uniformity of the grown layers in both the growth and lateral dimensions — properties which are essential for the fabrication of modulator arrays.
4×4 Arrays have been constructed and have shown state of the art modulation coupled with low leakage currents.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Similar content being viewed by others
References
W T Tsang, Appl Phys Lett., 49, 1010, 1986.
H Temkin, M B Panish and S N G Chu, Appl Phys Lett., 49, 859, 1986.
D A B Miller, D S Chemla, T H Wood, A C Gossard, W Wiegmann and C A Burrus, Phys Rev Lett., 53, 2173, 1984
D S Chemla, D A B Miller and P W Smith, Opt Eng., 24 556, 1985.
W T Tsang, IEEE CircundDev., to be published.
G J Davies and D A Andrews, Chemtronics, 3, 3, 1988.
Y Kawaguchi, H Asahi and H Nagai, Conf. on Solid State Devices, Tokyo 1986, 619.
JS Foord(Univ Oxford) private communication.
E G Scott, D A Andrews and G J Davies, J Crystal Growth, 81, 296, 1987.
E G Scott, S T Davey, M A G Halliwell and G J Davies, J Vac Sci Technol., B6, 603, 1988.
W J Bartels, J Vac Sci Technol., 81, 338, 1983.
M B Panish, J Crystal Growth, 81, 249, 1987.
P A Claxton, J S Roberts, J P R David, C M Sotomayor -Torres, M S Skolnick, P R Tapster and K J Nash, J Crystal Growth, 81, 288, 1987.
W T Tsang, J Crystal Growth, 81, 261, 1987.
M S Skolnick, P R Tapster, S J Bass, A D Pitt, N Apsley and S P Aldred, Semicond Sci Technol, 1, 29, 1986.
W Stolz, J Wagner and K Ploog, J Crystal Growth, 81, 79, 1987.
M H Lyons and M A G Halliwell, Advanced Materials for Telecommunications eds P A Glasgow, Y I Nissim, J-P Noblanc and J Speight (Paris:Les Editions de Physique), 323, 1986.
J M Vandenberg, R A Hamm, A T Macrander, M B Panish and H Temkin, Appl Phys Lett., 48, 1153, 1986. J M Vandenberg, M B Panish, H Temkin and R A Hamm, Appl Phys Lett., 53, 1920, 1988.
M H Lyons J Crystal Growth 1989 in press.
P F Fewster, Philips J Res., 41, 338, 1986.
M H Lyons, E G Scott and M A G Halliwell, ‘Microscopy of Semicond. Mats.’ Inst Phys Conf Ser., 1989, to be published.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1989 Springer Science+Business Media New York
About this chapter
Cite this chapter
Davies, G.J., Scott, E.G., Lyons, M.H., Rejman-Greene, M.A.Z., Andrews, D.A. (1989). Aspects of the Growth of InP/InGaAs Multi-Quantum Well Structures by Gas Source Molecular Beam Epitaxy. In: Fasol, G., Fasolino, A., Lugli, P. (eds) Spectroscopy of Semiconductor Microstructures. NATO ASI Series, vol 206. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-6565-6_3
Download citation
DOI: https://doi.org/10.1007/978-1-4757-6565-6_3
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4757-6567-0
Online ISBN: 978-1-4757-6565-6
eBook Packages: Springer Book Archive