Abstract
A strong memory effect takes place during chromium incorporation in low pressure organometallic growth of GaAs layers. SIMS analysis is well adapted to measure the chromium profile in the layer and its incorporation rate in GaAs. The results agree with a two-step adsorption-desorption mechanism on the reactor wall. A decrease of 15% of the Hall mobility for a free carrier concentration of 1017 cm-3, is observed when there is 2×1016 at. cm-3 of chromium in the active layer of a FET structure.
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References
Hallais, J.H. (1978). Acta Electron., 21, 129
Kato, Y., Mori, Y. and Morizane, K. (1979). J. Cryst. Growth, 47, 12
Bass, S.J. (1978). J. Cryst. Growth, 44, 29
Huber, A.M., Morillot, G., Merenda, P. and Linh, N.T. (1979). SIMS II Conference, Stanford, 27–31 August, p. 91. New York; Springer Verlag
Duchemin, J.P., Bonnet, M., Koelsch, F. and Huyghe, D. (1979). J. Electrochem. Soc., 126, 1134
Rossel, P., Tranduc, H., Graffeuil, J., Azizi, C., Nuzillat, G. and Bert, G. (1978). Rev. Phys. Appl., 13, 503
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© 1980 M. Bonnet, J.P. Duchemin, A.M. Huber and G. Morillot
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Bonnet, M., Duchemin, J.P., Huber, A.M., Morillot, G. (1980). Low Pressure Organometallic Growth of Chromium-Doped GaAs Buffer Layers. In: Rees, G.J. (eds) Semi-Insulating III–V Materials. Birkhäuser Boston. https://doi.org/10.1007/978-1-4684-9193-7_6
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DOI: https://doi.org/10.1007/978-1-4684-9193-7_6
Publisher Name: Birkhäuser Boston
Print ISBN: 978-1-4684-9195-1
Online ISBN: 978-1-4684-9193-7
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