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Redistribution of S and Cr in Thermally Annealed, Sulphur Implanted, Semi-Insulating GaAs

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Semi-Insulating III–V Materials

Abstract

Secondary Ion Mass Spectrometry (SIMS) has been used to study the thermal redistribution of S and Cr in sulphur implanted, semi-insulating GaAs using an SiO2 encapsulant. Sulphur was observed to diffuse rapidly only at low concentrations while chromium was found to redistribute into regions of implantation damage and lattice stress. The details of Cr redistribution are dependent on the sulphur implantation fluence and energy as well as on the specific annealing conditions.

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Author information

Authors and Affiliations

  1. Charles Evans and Associates, 1670 S. Amphlett Blvd, Suite 120, San Mateo, CA, 94402, USA

    C. A. Evans Jr, C. G. Hopkins, J. C. Norberg, V. R. Deline, R. J. Blattner, R. G. Wilson, D. M. Jamba & Y. S. Park

  2. Hughes Research Laboratories, Malibu Canyon Road, Malibu, CA, 90265, USA

    R. G. Wilson & D. M. Jamba

  3. Air Force Avionics Laboratory, Wright-Patterson AirForce Base, Ohio, 45433, USA

    Y. S. Park

Authors
  1. C. A. Evans Jr
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  2. C. G. Hopkins
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  3. J. C. Norberg
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  4. V. R. Deline
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  5. R. J. Blattner
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  6. R. G. Wilson
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  7. D. M. Jamba
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  8. Y. S. Park
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Editor information

Editors and Affiliations

  1. Plessey Research (Caswell) Ltd, UK

    G. J. Rees

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© 1980 C.A. Evans, Jr, C.G. Hopkins, J.C. Norberg. V.R. Deline, R.J. Blattner, R.G. Wilson, D.M. Jamba and Y.S. Park

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Evans, C.A. et al. (1980). Redistribution of S and Cr in Thermally Annealed, Sulphur Implanted, Semi-Insulating GaAs. In: Rees, G.J. (eds) Semi-Insulating III–V Materials. Birkhäuser Boston. https://doi.org/10.1007/978-1-4684-9193-7_16

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  • DOI: https://doi.org/10.1007/978-1-4684-9193-7_16

  • Publisher Name: Birkhäuser Boston

  • Print ISBN: 978-1-4684-9195-1

  • Online ISBN: 978-1-4684-9193-7

  • eBook Packages: Springer Book Archive

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