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Influence of Annealing on the Electrical Properties of Semi-Insulating GaAs

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Semi-Insulating III–V Materials

Abstract

The thermal stability of semi-insulating GaAs crystals is analysed as a function of the heat treatment conditions: the influence of temperature, carrier gas and encapsulation is studied. The annealed wafers are characterized by electrical and photoluminescence measurements. Capless annealed crystals show a p-type conversion above a critical temperature which strongly depends on the carrier gas but only slightly on the as-grown crystal. This conversion is attributed to manganese. Si3N4 coated wafers, heat-treated in standard conditions for ion implantation post-annealing, do not show manganese and their electrical behaviour involves the balance of both shallow and deep levels present in the as-grown crystal.

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References

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Authors and Affiliations

  1. Laboratoires d’Electronique et de Physique Appliquée, 3, avenue Descartes, 94450, Limeil-Brévannes, France

    A. Mircea-Roussel, G. Jacob & J. P. Hallais

Authors
  1. A. Mircea-Roussel
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  2. G. Jacob
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  3. J. P. Hallais
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Editor information

Editors and Affiliations

  1. Plessey Research (Caswell) Ltd, UK

    G. J. Rees

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© 1980 A. Mircea-Roussel, G. Jacob and J.P. Hallais

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Mircea-Roussel, A., Jacob, G., Hallais, J.P. (1980). Influence of Annealing on the Electrical Properties of Semi-Insulating GaAs. In: Rees, G.J. (eds) Semi-Insulating III–V Materials. Birkhäuser Boston. https://doi.org/10.1007/978-1-4684-9193-7_15

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  • DOI: https://doi.org/10.1007/978-1-4684-9193-7_15

  • Publisher Name: Birkhäuser Boston

  • Print ISBN: 978-1-4684-9195-1

  • Online ISBN: 978-1-4684-9193-7

  • eBook Packages: Springer Book Archive

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