Abstract
On implanting impurities to give shallow donor or acceptor states in Cr-doped substrates the apparent electrical activity following annealing may be above, below or close to 100%. By supposing that chromium and some other metallic impurity, which acts as an acceptor, redistribute during annealing, the electrical measurements on the implanted SI GaAs substrates can be understood.
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© 1980 P.N. Favennec and H. l’Haridon
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Favennec, P.N., L’Haridon, H. (1980). Influence of Chromium Redistribution on the Electrical Properties of Se and Zn Implanted Cr-Doped Substrates. In: Rees, G.J. (eds) Semi-Insulating III–V Materials. Birkhäuser Boston. https://doi.org/10.1007/978-1-4684-9193-7_14
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DOI: https://doi.org/10.1007/978-1-4684-9193-7_14
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