Abstract
Multiple energy bombardments of n+ GaAs with the three hydrogen isotopes have shown that deuterons offer great advantages for device isolation. Carrier removal is accomplished at a deuteron dose only 5% of that needed with protons, significantly reducing processing time. Higher doses may be needed for thermal stability, but in all cases deuteron bombardment has been found to be more stable for a given dose. A model for the carrier removal is described.
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© 1980 I.J. Saunders and K. Steeples
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Saunders, I.J., Steeples, K. (1980). Hydrogen Ion Bombardment of GaAs for Device Isolation. In: Rees, G.J. (eds) Semi-Insulating III–V Materials. Birkhäuser Boston. https://doi.org/10.1007/978-1-4684-9193-7_13
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DOI: https://doi.org/10.1007/978-1-4684-9193-7_13
Publisher Name: Birkhäuser Boston
Print ISBN: 978-1-4684-9195-1
Online ISBN: 978-1-4684-9193-7
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