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A Model for Thermal Conversion of Semi-Insulating GaAs

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Semi-Insulating III–V Materials

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Abstract

A model for thermal conversion of Cr-doped semi-insulating GaAs is proposed. Residual donors (Nd - Na) and out-diffusion of originally compensating Cr acceptors are mainly responsible for thermal conversion. The model explained well the experimental carrier concentration profiles in the layers that were thermally converted to n-type under a wide range of annealing conditions, with modification by thermally induced acceptors and donors.

The specification of Cr-doped semi-insulating GaAs for fabricating a MESFET by direct ion implantation was determined, based on the model, from the standpoint of thermal conversion and doping efficiency. The specification is (residual Nd - Na)/(initial Cr concentration)≤ 0.25, and (initial Cr concentration)≤5× 1016 cm-3.

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References

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Author information

Authors and Affiliations

  1. Sony Corporation Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama 240, Japan

    Jiro Kasahara & Naozo Watanabe

Authors
  1. Jiro Kasahara
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  2. Naozo Watanabe
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Editor information

Editors and Affiliations

  1. Plessey Research (Caswell) Ltd, UK

    G. J. Rees

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© 1980 J. Kasahara and N. Watanabe

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Kasahara, J., Watanabe, N. (1980). A Model for Thermal Conversion of Semi-Insulating GaAs. In: Rees, G.J. (eds) Semi-Insulating III–V Materials. Birkhäuser Boston. https://doi.org/10.1007/978-1-4684-9193-7_12

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  • DOI: https://doi.org/10.1007/978-1-4684-9193-7_12

  • Publisher Name: Birkhäuser Boston

  • Print ISBN: 978-1-4684-9195-1

  • Online ISBN: 978-1-4684-9193-7

  • eBook Packages: Springer Book Archive

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