Abstract
Cr impurity redistribution and its origin in Cr-doped semi-insulating GaAs substrates annealed without encapsulation have been investigated using secondary ion mass spectrometry and flameless atomic absorption spectrometry. It is concluded that, as a result of the Cr vaporization from the substrate surface, Cr diffuses rapidly towards the surface at 800° C and above. Also, the influence of surface thermal dissociation on the Cr diffusion is discussed.
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© 1980 T. Udagawa, M. Higashiura and T. Nakanisi
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Udagawa, T., Higashiura, M., Nakanisi, T. (1980). Redistribution and Vaporization of Cr Impurities in Semi-Insulating GaAs. In: Rees, G.J. (eds) Semi-Insulating III–V Materials. Birkhäuser Boston. https://doi.org/10.1007/978-1-4684-9193-7_11
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DOI: https://doi.org/10.1007/978-1-4684-9193-7_11
Publisher Name: Birkhäuser Boston
Print ISBN: 978-1-4684-9195-1
Online ISBN: 978-1-4684-9193-7
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