Abstract
Arsenic in-depth profiles have been measured using the Cameca Ion Analyzer by a controlled and gradual sputtering of the sample with_primary oxygen ions while monitoring the emitted AsO secondary ions.
The as-implanted arsenic profiles showed slight asymmetrical distributions from the peak with the leading edge of the profile further into silicon than the theoretical gaussian distribution. The peak concentrations were found to be nearly proportional to the ion doses. The implanted-diffused arsenic profiles were measured by the differential conductivity method also, and the total arsenic concentrations agreed with the implanted ion dose. These profiles measured by the Ion Analyzer were essentially step functions and consistent with the differential conductance data. Detection limits for arsenic under the operating conditions used were in the range of 2 ~ 3 E18 atoms/c.c.
The arsenic profiles obtained with the Ion Analyzer also showed two anomalous effects:
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1.
An apparent depletion of arsenic at the surface.
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2.
Apparent tails in the arsenic implanted-diffused profiles.
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Tsai, J.C.C., Morabito, J.M., Lewis, R.K. (1973). Arsenic Implanted and Implanted-Diffused Profiles in Silicon Using Secondary Ion Emission and Differential Resistance. In: Crowder, B.L. (eds) Ion Implantation in Semiconductors and Other Materials. The IBM Research Symposia Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2064-7_9
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DOI: https://doi.org/10.1007/978-1-4684-2064-7_9
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