Abstract
In order to distinguish between absorption and scattering as the predominant mechanism for near-band-edge optical attenuation in 400 keV proton-bombared GaAs, calorimetric measurements of absorption at 1.06 µm have been made using a YAG:Nd laser. In Addition, the photon energy dependence between 0.25 and 1.25 eV, and isochronal annealing between 30 and 450°C for proton-induced attenuation have been investigated. The calorimetric measurements combined with transmittance and reflectance measurements show that absorption is the primary cause of the proton-induced attenuation. Absorption near 1.06 µm is fit approximately by an exponential dependence upon photon energy, and is therefore attributed to band tail states. In contrast, a dependence on the square of the photon energy has been observed in other measurements for high fluence Xe ion implantation. Seventy percent of the proton-induced attenuation anneals below 300°C in agreement with previously measured neutron-induced optical attenuation.
This work was supported by the U. S. Atomic Energy Commission.
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Stein, H.J. (1973). Calorimetric Determination of Optical Absorption in Proton-Bombarded GaAs. In: Crowder, B.L. (eds) Ion Implantation in Semiconductors and Other Materials. The IBM Research Symposia Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2064-7_5
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DOI: https://doi.org/10.1007/978-1-4684-2064-7_5
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