Skip to main content
SpringerLink
Log in

Concentration Profiles of Arsenic Implanted in Silicon

  • Chapter
Ion Implantation in Semiconductors and Other Materials

Part of the book series: The IBM Research Symposia Series ((IRSS))

Abstract

Concentration profiles of 35 to 130KeV arsenic ions have been measured by means of neutron-activation analysis. The profiles are composed of two parts; one of nearly gaussian shape around the peak concentration region and the other of the nearly exponential shape at the deeper region beyond the peak. The nearly gaussian components agree with the prediction by the LSS theory. The exponential shape was not observed in heavily damaged silicon. The slope of the exponential tail is independent of a dose, substrate temperature and ion energy. It is proposed that this tail is caused by a rapid diffusion process such as interstitial diffusion.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
eBook
USD 16.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. J. Lindhard, M. Scharff and H.E. Schiott; kgl. Danske Videnskab. Selskab. Mat. Fys. Medd. 33 (1963) 14.

    Google Scholar 

  2. O.J. Marsh, R. Baron, and G.A. Shifring; Appl. Phys. Letters: 13 (1968) 199 f

    Article  ADS  Google Scholar 

  3. R.A. Moline: J. Appl. Phys. 42 (1971) 3553.

    Article  ADS  Google Scholar 

  4. G. Dearnaley, M.A. Wilkins, P.D. Goods, J.H. Freeman, and G.A. Gard: in Atomic collision Phenomena in Solids, edited by F D.W. Palmer, M.W. Thompson, and P.D. Townsend (American Elsevier, New York, 1970), p.633

    Google Scholar 

  5. K. Gamo, K. Iwaki, K. Masuda, S. Namba, S. Ishihara, and I. Kimura: Proc. 2nd Intern. Conf. on Ion Implantation in Semiconductors, Garmish-Partenkichen, 1971, p.459

    Book  Google Scholar 

  6. S. Namba, K. Masuda, K. Gamo, K. Iwaki: Proc. U.S.-Japan Seminar on Ion Implantation, Kyoto, 1971 p.49

    Google Scholar 

  7. J.M. Fairfield and B.L. Crowder: Trans. Met. Soc. AIME 245 (1969) 469

    Google Scholar 

  8. D.K. Brice: Radiation Effects 6 (1970) 77 and private f-commimication

    Article  ADS  Google Scholar 

  9. S J.A. Davies and P. Jespersgaard: Can. J. Phys. 44, (1966) 1631.

    Article  ADS  Google Scholar 

  10. J.W. Mayer, L. Eriksson, and J.A. Davies, “ion Implantation in Semiconductors,” Chapt. 2, Academic Press, New York (1970)

    Google Scholar 

  11. Dearnaley, J.H. Freeman, G.A. Gard and M.A. Wilkins: Can. J. Phys. 46 (1968) 587f

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, Japan

    M. Iwaki, K. Gamo, K. Masuda & S. Namba

  2. Research Reactor Institute, Kyoto University, Kumatori, Sennan-Gun, Osaka, Japan

    S. Ishihara & I. Kimura

Authors
  1. M. Iwaki
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. K. Gamo
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. K. Masuda
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. S. Namba
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. S. Ishihara
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. I. Kimura
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA

    Billy L. Crowder

Rights and permissions

Reprints and permissions

Copyright information

© 1973 Plenum Press, New York

About this chapter

Cite this chapter

Iwaki, M., Gamo, K., Masuda, K., Namba, S., Ishihara, S., Kimura, I. (1973). Concentration Profiles of Arsenic Implanted in Silicon. In: Crowder, B.L. (eds) Ion Implantation in Semiconductors and Other Materials. The IBM Research Symposia Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2064-7_11

Download citation

  • DOI: https://doi.org/10.1007/978-1-4684-2064-7_11

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-2066-1

  • Online ISBN: 978-1-4684-2064-7

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation