Abstract
Bombardment of arsenic doped silicon with 400 keV helium ions and with 220 keV tellurium ions at 250°C has been found to cause arsenic to move off lattice sites, as previously observed for 1.8 MeV helium ion bombardment. The fraction of the arsenic which is off lattice sites approaches a saturation at high fluences which seems to be independent of the energy and type of the bombarding ion and temperature between room temperature and 400°C. The movement of arsenic off lattice sites is caused by defects introduced in the silicon as a result of the bombardment. These defects appear to be capable of diffusing distances greater than lμm before causing the off site movement of an arsenic atom. Annealing of the tellurium bombarded samples to 700 to 800°C restores most of the off site arsenic to substitutional positions in the lattice.
Work at Caltech supported in part by Air Force Cambridge Research Laboratories.
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© 1973 Plenum Press, New York
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Eisen, F.H., Haskell, J.D., Rimini, E., Mayer, J.W. (1973). The Effect of Ion Implantation on the Lattice Location of Arsenic in Arsenic — Doped Si. In: Crowder, B.L. (eds) Ion Implantation in Semiconductors and Other Materials. The IBM Research Symposia Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2064-7_10
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