Aluminum Arsenide (AIAs)

Adachi, Sadao

doi:10.1007/978-1-4615-5247-5_17

Sadao Adachi²

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Abstract

Aluminum arsenide (AlAs) is of considerable interest from the standpoint of solid-state devices, especially since its alloys with GaAs provide materials for high-speed electron and optoelectronic devices [1]. There is also widespread use of AlAs, GaAs, and Al_xGa_1-x in the fabrication of III–V quantum structures [2]. A review of many phySiCal and semiconducting properties of these materials has been given in Refs. [3–5].

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Department of Electronic Engineering, Gunma University, Kiryu-shi, Gunma, 376-8515, Japan
Sadao Adachi

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Adachi, S. (1999). Aluminum Arsenide (AIAs). In: Optical Constants of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5247-5_17

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DOI: https://doi.org/10.1007/978-1-4615-5247-5_17
Publisher Name: Springer, Boston, MA
Print ISBN: 978-0-7923-8567-7
Online ISBN: 978-1-4615-5247-5
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