Abstract
SDSL models neglect any interrelationships between different masks, as is the case with transistors, and also neglect those defects which do not cause either a short or a break. Yet if the defect falls in the poly-diffusion area of a transistor it can be fatal even if it does not totally break the geometrical pattern. It is thus not sufficient to extract single-layer critical areas if either an accurate yield prediction or a realistic layout to fault extraction are desired.
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© 1993 Springer Science+Business Media New York
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de Gyvez, J.P. (1993). Single Defect Multiple Layer (SDML) Model. In: Integrated Circuit Defect-Sensitivity: Theory and Computational Models. The Springer International Series in Engineering and Computer Science, vol 208. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3158-6_4
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DOI: https://doi.org/10.1007/978-1-4615-3158-6_4
Publisher Name: Springer, Boston, MA
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Online ISBN: 978-1-4615-3158-6
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