Abstract
We consider nanojunctions in the single electron tunnelling regime which, due to a high degree of spatial symmetry, have a degenerate many-body spectrum. They comprise single molecule quantum dots as well as artificial quantum dot molecules. As a consequence, interference phenomena which cause a current blocking can occur at specific values of the bias and gate voltage. We present here a general formalism providing necessary and sufficient conditions for interference blockade also in the presence of spin-polarized leads. As examples we analyze a triple quantum dot as well as a benzene molecule single electron transistor.
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Notes
- 1.
If the equilibrium chemical potential is not set to zero, the many-body energy spectrum should be substituted with the spectrum of the many-body free energy (H sys −μ 0 N) where μ 0 is the chemical potential of the leads at zero bias. The rest of the argumentation remains unchanged.
- 2.
The assumption of a spinless system is not restrictive for parallel polarized leads and transitions between a spin singlet and a doublet since the different spin sectors decouple from each other.
- 3.
This denomination of the Pariser–Parr–Pople Hamiltonian is more common in the solid state community.
- 4.
The corresponding eigenvalue depends on the symmetry of the atomic (quantum dot) wave function with respect to the molecular (artificial molecule) plane: \(\hslash \) or 0 for symmetric or antisymmetric wave functions, respectively.
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Acknowledgements
We would like to thank Dr. Georg Begemann and Dana Darau for their important contribution to the development of the research presented in this chapter. We also acknowledge the German Research Foundation (DFG) for the financial support through the research programs SPP 1243, SFB 689 and GRK 1570.
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Donarini, A., Grifoni, M. (2014). Interference Single Electron Transistors Based on Quantum Dot Molecules. In: Wu, J., Wang, Z. (eds) Quantum Dot Molecules. Lecture Notes in Nanoscale Science and Technology, vol 14. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-8130-0_7
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