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Optical Properties of Lateral InGaAs Quantum Dot Molecules Single- and Bi-Layers

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Quantum Dot Molecules

Part of the book series: Lecture Notes in Nanoscale Science and Technology ((LNNST,volume 14))

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Abstract

Growth of InGaAs nanostructures by molecular beam epitaxy using partial-cap and regrowth technique results in an ensemble of lateral quantum dot molecules (QDMs). Each QDM comprises a large, central quantum dot and several small, satellite quantum dots which emit at different energies and exhibit qualitatively different optical behaviors. This chapter reviews, explains, and discusses the various fundamental aspects of lateral QDM single layers: the nucleation mechanism, the photoluminescent spectra, and the unique bimodal optical characteristics. The chapter ends by demonstrating the usefulness of lateral QDM bi-layers as a promising broadband near-infrared material.

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Acknowledgments

AFM data analyses are performed using Gwyddion. This work is supported by Thailand Research Fund (RSA5580015, DPG5380002); Nanotec; Integrated Innovation Academic Center (IIAC), Chulalongkorn University Centenary Academic Development Project; and the Higher Education Research Promotion and National Research University Project of Thailand, Office of the Higher Education Commission (CU56-EN09).

Author information

Authors and Affiliations

  1. Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330, Thailand

    Songphol Kanjanachuchai, Nirat Patanasemakul, Nitidet Thudsalingkarnsakul, Naparat Siripitakchai, Pornchai Changmoang, Supachok Thainoi & Somsak Panyakeow

  2. International School of Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330, Thailand

    Natapong Thongkamkoon

Authors
  1. Songphol Kanjanachuchai
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  2. Nirat Patanasemakul
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  3. Natapong Thongkamkoon
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  4. Nitidet Thudsalingkarnsakul
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  5. Naparat Siripitakchai
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  6. Pornchai Changmoang
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  7. Supachok Thainoi
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  8. Somsak Panyakeow
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Correspondence to Songphol Kanjanachuchai .

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Editors and Affiliations

  1. State Key Laboratory of Electronic Thin, University of Electronic Science and Technology of China, Chengdu, People's Republic of China

    Jiang Wu

  2. State Key Laboratory of Electronic, University of Electronic Science and Technology, Chengdu, People's Republic of China

    Zhiming M. Wang

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Kanjanachuchai, S. et al. (2014). Optical Properties of Lateral InGaAs Quantum Dot Molecules Single- and Bi-Layers. In: Wu, J., Wang, Z. (eds) Quantum Dot Molecules. Lecture Notes in Nanoscale Science and Technology, vol 14. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-8130-0_3

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