Abstract
All PUF circuits base on mismatches between different circuit components. These mismatches are utilized to generate the PUF specific output. To design a PUF it is important to know the mismatch properties of the available components. Since this work concentrates on microelectronic circuits, microelectronic components are analyzed towards their usability as PUF components in this chapter. Since MOS transistors are the major source of mismatch in microelectronic circuits, a focus is put on this kind of devices.
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References
Alam MA (2005) On the reliability of micro-electronic devices: An introductory lecture on negative bias temperature instability. URL http://nanohub.org/resources/193 (visited Sep 23, 2012)
Asenov A, Brown A, Davies J, Kaya S, Slavcheva G (2003) Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale mosfets. IEEE Trans Electron Dev 50(9):1837–1852. DOI 10.1109/TED.2003.815862
Bernstein K, Frank DJ, Gattiker AE, Haensch W, Ji BL, Nassif SR, Nowak EJ, Pearson DJ, Rohrer NJ (2006) High-performance cmos variability in the 65-nm regime and beyond. IBM J Res Develop 50(4.5):433–449. DOI 10.1147/rd.504.0433
Black J (1969) Electromigration; a brief survey and some recent results. IEEE Trans Electron Dev 16(4):338–347. DOI 10.1109/T-ED.1969.16754
Drennan P, McAndrew C (1999) A comprehensive mosfet mismatch model. In: International electron devices meeting, 1999. IEDM Technical Digest, pp 167–170, 1999. DOI 10.1109/IEDM.1999.823871
Drennan P, McAndrew C (2003) Understanding mosfet mismatch for analog design. IEEE J Solid State Circ 38(3):450–456. DOI 10.1109/JSSC.2002.808305
Hastings A (2001) The art of analg layout. Prentice Hall, Englewood Cliffs
Hu C, Tam SC, Hsu FC, Ko PK, Chan TY, Terrill K (1985) Hot-electron-induced mosfet degradation – model, monitor, and improvement. IEEE J Solid State Circ 20(1):295–305. DOI 10.1109/JSSC.1985.1052306
Islam A, Alam M (2010) Mobility enhancement due to charge trapping x00026; defect generation: Physics of self-compensated bti. In: IEEE international reliability physics symposium (IRPS), pp 65–72, 2010. DOI 10.1109/IRPS.2010.5488853
Koutsoyannopoulos Y, Papananos Y (2000) Systematic analysis and modeling of integrated inductors and transformers in rf ic design. IEEE Trans Circ Syst II: Anal Dig Signal Process 47(8):699–713. DOI 10.1109/82.861403
Mezzomo C, Bajolet A, Cathignol A, Di Frenza R, Ghibaudo G (2011) Characterization and modeling of transistor variability in advanced cmos technologies. IEEE Trans Electron Dev 58(8):2235–2248. DOI 10.1109/TED.2011.2141140
Pelgrom M, Duinmaijer A, Welbers A (1989) Matching properties of mos-transistors. IEEE J Solid State Circ 24(5):1433–1440
Ribes G, Mitard J, Denais M, Bruyere S, Monsieur F, Parthasarathy C, Vincent E, Ghibaudo G (2005) Review on high-k dielectrics reliability issues. IEEE Trans Dev Mater Reliabil 5(1): 5–19. DOI 10.1109/TDMR.2005.845236
Schaper U, Einfeld J (2011) Matching model for planar bulk transistors with halo implantation. IEEE Electron Dev Lett 32(7):859–861. DOI 10.1109/LED.2011.2150194
Sune J, Placencia I, Barniol N, Farres E, Aymerich X (1989) Degradation and breakdown of gate oxides in vlsi devices. Physica Status Solidi (a) 111(2):675–685. DOI 10.1002/pssa.2211110235, URL http://dx.doi.org/10.1002/pssa.2211110235
Tsividis Y, McAndrew C (2011) Operation and modeling of the MOS transistor, 3rd edn. Oxford University Press, Oxford
Tuinhout H, Montree A, Schmitz J, Stolk P (1997) Effects of gate depletion and boron penetration on matching of deep submicron cmos transistors. In: International electron devices meeting, 1997. IEDM ’97. Technical digest, pp 631–634, 1997. DOI 10.1109/IEDM.1997.650463
Varghese D, Moens P, Alam M (2010) on-state hot carrier degradation in drain-extended nmos transistors. IEEE Trans Electron Dev 57(10):2704–2710. DOI 10.1109/TED.2010.2059632
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Böhm, C., Hofer, M. (2013). Sources of Mismatch and Errors. In: Physical Unclonable Functions in Theory and Practice. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-5040-5_6
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DOI: https://doi.org/10.1007/978-1-4614-5040-5_6
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