Abstract
Carbon nanotube (CNT) based electron field emission devices may have an advantage over metal Spindt tip style designs due to the ability to create a highly localized electric field at the extremely small diameter tip of the CNT. The primary objective for this work is to create a robust micro structure to support low voltage field emission from the CNTs in a gated device. This paper will discuss the micro fabrication techniques used to etch 2–4 μm thick thermal oxide layers on silicon substrates. A chrome layer is deposited by electron beam evaporation to make the gate layer of the triode device and act as an etch mask. The metal layer is then coated with photoresist, patterned with hole openings ranging from 8 to 12 μm in diameter and wet etched in acid through to the SiO2 layer. Different dry etch chemistries combined with wet etching are used to study the effect on the SiO2 sidewall. The shape and slope of the SiO2 sidewall and gate opening play a vital role in fabricating a robust triode device that doesn’t easily short out when the CNTs are grown later in the process.
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Acknowledgements
The authors would like to thank the Air Force Research Laboratory (AFRL) Propulsion Directorate for their assistance, use of their resources and facilities, especially the sputtering and T-CVD systems. The authors also thank the technical support and dedicated work of AFIT’s own cleanroom staff, Rich Johnston and Thomas Stephenson.
DisclaimerTheviews expressed in this paper are those of the authors and do not reflect the official policy or position of the United States Air Force, Department of Defense, or the U.S. Government.
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Glauvitz, N.E., Coutu, R.A., Collins, P.J., Starman, L.A. (2013). Etching Silicon Dioxide for CNT Field Emission Device. In: Shaw, G., Prorok, B., Starman, L. (eds) MEMS and Nanotechnology, Volume 6. Conference Proceedings of the Society for Experimental Mechanics Series. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-4436-7_14
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DOI: https://doi.org/10.1007/978-1-4614-4436-7_14
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