Abstract
In this chapter, we give a short introduction on the importance of variation-tolerant SRAM design for the nanometer regime.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
T.-C. Chen, Where is CMOS going: trendy hype versus real technology, in Proceedings of the International Solid-State Circuits Conference ISSCC, 2006, pp. 22–28
S.R. Nassif, Modeling and analysis of manufacturing variations, in Proceedings of IEEE Custom Integrated Circuits Conference, 2001, pp. 223–228
H. Masuda, S. Ohkawa, A. Kurokawa, M. Aoki, Challenge: variability characterization and modeling for 65- to 90-nm processes, in Proceedings of IEEE Custom Integrated Circuits Conference, 2005, pp. 593–599
B. Wong, A. Mittal, Y. Cao, G.W. Starr, Nano-CMOS Circuit and Physical Design (Wiley-Interscience, New York, 2004)
The International Technology Roadmap for Semiconductors (ITRS), http://public.itrs.net
J. Tschanz, K. Bowman, V. De, Variation-tolerant circuits: circuit solutions and techniques, in DAC ’05: Proceedings of the 42nd Annual Conference on Design Automation, 2005, pp. 762–763
D. Frank, R. Dennard, E. Nowak, P. Solomon, Y. Taur, H.S. Wong, Device scaling limits of Si MOSFETs and their application dependencies. Proc. IEEE 89(3), 259–288 (2001)
J.A. Croon, W. Sansen, H.E. Maes, Matching Properties of Deep Sub-Micron MOS Transistors (Springer, New York, 2005)
K. Agarwal, S. Nassif, Statistical analysis of SRAM cell stability, in DAC ’06: Proceedings of the 43rd Annual Conference on Design Automation, 2006, pp. 57–62
S. Mukhopadhyay, H. Mahmoodi, K. Roy, Statistical design and optimization of SRAM cell for yield enhancement, in Proceedings of International Conference on, Computer Aided Design, 2004, pp. 10–13
R. Heald, P. Wang, Variability in sub-100nm SRAM designs, in Proceedings of International Conference on, Computer Aided Design, 2004, pp. 347–352
Y. Zorian, Embedded memory test and repair: infrastructure IP for SOC yield, in Proceedings the International Test Conference (ITC), 2002, pp. 340–349
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2013 Springer Science+Business Media New York
About this chapter
Cite this chapter
Abu-Rahma, M.H., Anis, M. (2013). Introduction. In: Nanometer Variation-Tolerant SRAM. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-1749-1_1
Download citation
DOI: https://doi.org/10.1007/978-1-4614-1749-1_1
Published:
Publisher Name: Springer, New York, NY
Print ISBN: 978-1-4614-1748-4
Online ISBN: 978-1-4614-1749-1
eBook Packages: EngineeringEngineering (R0)