Abstract
Process-induced variability has huge impact on the circuit performance in the sub-90 nm VLSI technologies [120]. This is the particular case for leakage power, which has increased dramatically with the technology scaling and is becoming the dominant chip power dissipation [71].
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
A. Abu-Dayya and N. Beaulieu, “Comparison of methods of computing correlated lognormal sum distributions and outages for digital wireless applications,” in Proc. IEEE Vehicular Technology Conference, vol. 1, June 1994, pp. 175–179.
S. Bhardwaj, S. Vrudhula, and A. Goel, “A unified approach for full chip statistical timing and leakage analysis of nanoscale circuits considering intradie process variations,” IEEE Trans. on Computer-Aided Design of Integrated Circuits and Systems, vol. 27, no. 10, pp. 1812–1825, Oct 2008.
S. Borkar, T. Karnik, and V. De, “Design and reliability challenges in nanometer technologies,” in Proc. Design Automation Conf. (DAC). IEEE Press, 2004, pp. 75–75.
H. Chang and S. S. Sapatnekar, “Full-chip analysis of leakage power under process variations, including spatial correlations,” in Proc. IEEE/ACM Design Automation Conference (DAC), 2005, pp. 523–528.
H. Chen, S. Neely, J. Xiong, V. Zolotov, and C. Visweswariah, “Statistical modeling and analysis of static leakage and dynamic switching power,” in Power and Timing Modeling, Optimization and Simulation: 18th International Workshop, (PATMOS), Sep 2008, pp. 178–187.
V. De and S. Borkar, “Technology and design challenges for low power and high performance,” in Proc. Int. Symp. on Low Power Electronics and Design (ISLPED), Aug 1999, pp. 163–168.
S. G. Duvall, “Statistical circuit modeling and optimization,” in Intl. Workshop Statistical Metrology, Jun 2000, pp. 56–63.
P. Friedberg, Y. Cao, J. Cain, R. Wang, J. Rabaey, and C. Spanos, “Modeling within-die spatial correlation effects for process design co-optimization,” in Proceedings of the 6th International Symposium on Quality of Electronic Design, 2005, pp. 516–521.
K. R. Heloue, N. Azizi, and F. N. Najm, “Modeling and estimation of full-chip leakage current considering within-die correlation,” in Proc. IEEE/ACM Design Automation Conference (DAC), 2007, pp. 93–98.
“International technology roadmap for semiconductors (ITRS), 2010 update,” 2010, http://public.itrs.net.
P. Li and W. Shi, “Model order reduction of linear networks with massive ports via frequency-dependent port packing,” in Proc. Design Automation Conf. (DAC), 2006, pp. 267–272.
T. Li, W. Zhang, and Z. Yu, “Full-chip leakage analysis in nano-scale technologies: Mechanisms, variation sources, and verification,” in Proc. Design Automation Conf. (DAC), June 2008, pp. 594–599.
X. Li, J. Le, L. Pileggi, and A. Strojwas, “Projection-based performance modeling for inter/intra-die variations,” in Proc. Int. Conf. on Computer Aided Design (ICCAD), 2005, pp. 721–727.
X. Li, J. Le, and L. T. Pileggi, “Projection-based statistical analysis of full-chip leakage power with non-log-normal distributions,” in Proc. IEEE/ACM Design Automation Conference (DAC), July 2006, pp. 103–108.
S. Mukhopadhyay and K. Roy, “Modeling and estimation of total leakage current in nano-scaled CMOS devices considering the effect of parameter variation,” in Proc. Int. Symp. on Low Power Electronics and Design (ISLPED), 2003, pp. 172–175.
S. Narendra, V. De, S. Borkar, D. A. Antoniadis, and A. P. Chandrakasan, “Full-chip subthreshold leakage power prediction and reduction techniques for sub-0.18-μm CMOS,” IEEE J. Solid-State Circuits, vol. 39, no. 3, pp. 501–510, Mar 2004.
S. Nassif, “Delay variability: sources, impact and trends,” in Proc. IEEE Int. Solid-State Circuits Conf., San Francisco, CA, Feb 2000, pp. 368–369.
M. Orshansky, L. Milor, and C. Hu, “Characterization of spatial intrafield gate cd variability, its impact on circuit performance, and spatial mask-level correction,” in IEEE Trans. on Semiconductor Devices, vol. 17, no. 1, Feb 2004, pp. 2–11.
R. Rao, A. Srivastava, D. Blaauw, and D. Sylvester, “Statistical analysis of subthreshold leakage current for VLSI circuits,” IEEE Trans. on Very Large Scale Integration (VLSI) Systems, vol. 12, no. 2, pp. 131–139, Feb 2004.
R. Shen, N. Mi, S. X.-D. Tan, Y. Cai, and X. Hong, “Statistical modeling and analysis of chip-level leakage power by spectral stochastic method,” in Proc. Asia South Pacific Design Automation Conf. (ASPDAC), Jan 2009, pp. 161–166.
A. Srivastava, R. Bai, D. Blaauw, and D. Sylvester, “Modeling and analysis of leakage power considering within-die process variations,” in Proc. Int. Symp. on Low Power Electronics and Design (ISLPED), Aug 2002, pp. 64–67.
S. X.-D. Tan and L. He, Advanced Model Order Reduction Techniques in VLSI Design. Cambridge University Press, 2007.
R. Teodorescu, B. Greskamp, J. Nakano, S. R. Sarangi, A. Tiwari, and J. Torrellas, “A model of parameter variation and resulting timing errors for microarchitects,” in Workshop on Architectural Support for Gigascale Integration (ASGI), Jun 2007.
J. M. Wang, B. Srinivas, D. Ma, C. C.-P. Chen, and J. Li, “System-level power and thermal modeling and analysis by orthogonal polynomial based response surface approach (OPRS),” in Proc. Int. Conf. on Computer Aided Design (ICCAD), Nov 2005, pp. 727–734.
J. Xiong, V. Zolotov, and L. He, “Robust extraction of spatial correlation,” IEEE Trans. on Computer-Aided Design of Integrated Circuits and Systems, vol. 26, no. 4, 2007.
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 2012 Springer Science+Business Media, LLC
About this chapter
Cite this chapter
Shen, R., Tan, S.XD., Yu, H. (2012). Traditional Statistical Leakage Power Analysis Methods. In: Statistical Performance Analysis and Modeling Techniques for Nanometer VLSI Designs. Springer, Boston, MA. https://doi.org/10.1007/978-1-4614-0788-1_3
Download citation
DOI: https://doi.org/10.1007/978-1-4614-0788-1_3
Published:
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4614-0787-4
Online ISBN: 978-1-4614-0788-1
eBook Packages: EngineeringEngineering (R0)