Abstract
Discrete circuit element and ring oscillator-based test structures described in Chapters 3, 4, 5, and 6 are essential for CMOS technology characterization. However, these test structures do not capture all of the transient behavior exhibited by circuits and devices during product operation. High-speed tests on large logic and memory blocks are very useful for validating product functionality and predicting product yield but provide only limited information on CMOS technology process and circuit models. Rapid debug of product chips and technology characterization in general are assisted by another class of high-speed test structures devoted to model-to-hardware correlation for circuit functionality, timing, and noise under different operating conditions. In these test structures, measurements are carried out either at high frequencies (10 MHz to several GHz), or with signal rise and fall times of <100 ps, or both.
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Bhushan, M., Ketchen, M.B. (2011). High-Speed Characterization. In: Microelectronic Test Structures for CMOS Technology. Springer, New York, NY. https://doi.org/10.1007/978-1-4419-9377-9_7
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DOI: https://doi.org/10.1007/978-1-4419-9377-9_7
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