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Model Level 3: Optimization

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Voltage Regulators for Next Generation Microprocessors

Abstract

This chapter presents a systematic approach for the design of main components of the VR, namely the input/output filters, gate drivers, and power switches. Regarding control schemes, the nonlinear hysteretic control approach is selected to fulfill the high bandwidth requirements imposed by the load transients. This selection will strongly condition the dynamic operation of the converter as well as the size of the output filter, both aspects of which will be addressed in the following sections.

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Notes

  1. 1.

    Further deactivating the SyncFET switches (and hence the synchronous rectification functionality) during the load transient may notably enhance the transient response considering that the body diode reverse voltage can be even higher than the output voltage.

References

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Correspondence to Toni López .

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López, T., Elferich, R., Alarcón, E. (2011). Model Level 3: Optimization. In: Voltage Regulators for Next Generation Microprocessors. Springer, New York, NY. https://doi.org/10.1007/978-1-4419-7560-7_5

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  • DOI: https://doi.org/10.1007/978-1-4419-7560-7_5

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  • Publisher Name: Springer, New York, NY

  • Print ISBN: 978-1-4419-7559-1

  • Online ISBN: 978-1-4419-7560-7

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