Abstract
The accurate performance predictions of model level 0 are achieved by means of rather complex circuit representation techniques of both power MOSFETs and converter circuit. Consequently, the resulting nonlinear equivalent network can only be resolved by numerical methods usually involving high processing power and long simulations times.
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References
López T (2002) High frequency resonant gate drivers forMOSFETs with gate charge recovery. Master of Science in Electrical Engineering, Polytechnical University of Catalunya, Barcelona, Spain
PIP212-12M DC-to-DC converter powertrain online documentation, http://www.nxp.com. Accessed Oct 2006
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© 2011 Springer Science+Business Media, LLC
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López, T., Elferich, R., Alarcón, E. (2011). Model Level 1: Piecewise Linear Analytical Switching Model. In: Voltage Regulators for Next Generation Microprocessors. Springer, New York, NY. https://doi.org/10.1007/978-1-4419-7560-7_3
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DOI: https://doi.org/10.1007/978-1-4419-7560-7_3
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