Abstract
The aim of this chapter is an introduction of p–n junction diode applications of transparent oxide semiconductors (TOSs). p–n junctions of TOSs are of great importance in order to realize transparent electronic circuits since p–n junctions are basic building block of electronic circuits and functional properties of commercial semiconductor electronics are attributable to such junctions. The built-in electric field, which is formed at a p–n junction region of a semiconductor, leads to various electronic and optoelectronic functions of semiconductor electronics. In this chapter, the general physics, the fabrication and the measurement of TOS p–n junctions will be described. It concludes with a discussion of several optoelectronic devices, e.g., transparent current rectifier, photovoltaic and light-emitting diode (LED) composed of p–n junctions of TOSs.
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Ohta, H. (2011). Junctions. In: Ginley, D. (eds) Handbook of Transparent Conductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-1638-9_14
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DOI: https://doi.org/10.1007/978-1-4419-1638-9_14
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